Inventor · disambiguated record
Kangho Lee
Also filed as: LEE KANGHO
87 granted patents·15 pending applications·884 citations·filing 1999–2024
99Inventor score
Files withQUALCOMM INC51GLOBALFOUNDRIES SG PTE LTD15SAMSUNG ELECTRONICS CO LTD10LEE KANGHO6KIM JUNG PILL4
Top patents by PatentIndex Score
102 records- 0199US9548445B2Amorphous alloy space for perpendicular MTJsQUALCOMM INC·Filed 2015·Granted Jan 17, 2017·80 cites·12 claims
- 0299US9379314B2Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)QUALCOMM INC·Filed 2013·Granted Jun 28, 2016·65 cites·10 claims
- 0399US9142762B1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Sep 22, 2015·45 cites·10 claims
- 0498US9935258B2Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching deviceQUALCOMM INC·Filed 2016·Granted Apr 3, 2018·36 cites·18 claims
- 0598US9634237B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2014·Granted Apr 25, 2017·46 cites·5 claims
- 0698US9245608B2Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching deviceCHEN WEI-CHUAN·Filed 2012·Granted Jan 26, 2016·82 cites·16 claims
- 0797US9589619B2Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropyQUALCOMM INC·Filed 2015·Granted Mar 7, 2017·22 cites·21 claims
- 0895US9245610B2OTP cell with reversed MTJ connectionKIM JUNG PILL·Filed 2012·Granted Jan 26, 2016·18 cites·10 claims
- 0994US8580583B2Magnetic tunnel junction device and fabricationLEE KANGHO·Filed 2012·Granted Nov 12, 2013·12 cites·17 claims
- 1093US9620706B2Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted Apr 11, 2017·10 cites·30 claims
- 1193US9595917B2Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizerQUALCOMM INC·Filed 2015·Granted Mar 14, 2017·13 cites·20 claims
- 1293US8547736B2Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionRAO HARI M·Filed 2010·Granted Oct 1, 2013·19 cites·25 claims
- 1392US9461094B2Switching film structure for magnetic random access memory (MRAM) cellQUALCOMM INC·Filed 2014·Granted Oct 4, 2016·14 cites·18 claims
- 1492US9343135B2Physically unclonable function based on programming voltage of magnetoresistive random-access memoryQUALCOMM INC·Filed 2013·Granted May 17, 2016·17 cites·17 claims
- 1592US9298946B2Physically unclonable function based on breakdown voltage of metal-insulator-metal deviceQUALCOMM INC·Filed 2013·Granted Mar 29, 2016·17 cites·33 claims
- 1692US9214624B2Amorphous spacerlattice spacer for perpendicular MTJsQUALCOMM INC·Filed 2013·Granted Dec 15, 2015·14 cites·10 claims
- 1792US8120126B2Magnetic tunnel junction device and fabricationLEE KANGHO·Filed 2009·Granted Feb 21, 2012·17 cites·43 claims
- 1891US9736398B2X-ray detecting method, photographing method using the X-ray detecting method, and X-ray detector using the methodsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·7 cites·20 claims
- 1991US9646670B2Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropyQUALCOMM INC·Filed 2016·Granted May 9, 2017·10 cites·20 claims
- 2091US8969984B2Magnetic tunnel junction deviceQUALCOMM INC·Filed 2013·Granted Mar 3, 2015·9 cites·30 claims
- 2191US8587993B2Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)LEE KANGHO·Filed 2009·Granted Nov 19, 2013·18 cites·22 claims
- 2291US8564079B2STT MRAM magnetic tunnel junction architecture and integrationKANG SEUNG H·Filed 2009·Granted Oct 22, 2013·19 cites·11 claims
- 2391US8320167B2Programmable write driver for STT-MRAMRAO HARI M·Filed 2010·Granted Nov 27, 2012·15 cites·32 claims
- 2491USD473879SPortion of a display panel or computer screen with an icon imageWATCHGUARD TECHNOLOGIES INC·Filed 1999·Granted Apr 29, 2003·40 cites·1 claims
- 2590US9865801B1Integrated circuits with magnetic tunnel junctions and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 9, 2018·7 cites·18 claims
- 2690US8923044B2MTP MTJ deviceLI XIA·Filed 2012·Granted Dec 30, 2014·13 cites·31 claims
- 2790US8441850B2Magnetic random access memory (MRAM) layout with uniform patternLEE KANGHO·Filed 2010·Granted May 14, 2013·12 cites·25 claims
- 2888US8614912B2Magnetic random access memory (MRAM)layout with uniform patternQUALCOMM INC·Filed 2013·Granted Dec 24, 2013·9 cites·23 claims
- 2986US9614147B2Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)QUALCOMM INC·Filed 2016·Granted Apr 4, 2017·6 cites·20 claims
- 3086US9165631B2OTP scheme with multiple magnetic tunnel junction devices in a cellKIM JUNG PILL·Filed 2012·Granted Oct 20, 2015·10 cites·13 claims
- 3184US10510946B2MRAM chip magnetic shieldingGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Dec 17, 2019·4 cites·16 claims
- 3284US9601687B2Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Mar 21, 2017·8 cites·9 claims
- 3383US9728718B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 3483US9653137B2STT-MRAM bitcell for embedded flash applicationsGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 16, 2017·6 cites·20 claims
- 3582US9047964B2Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thicknessLEE KANGHO·Filed 2012·Granted Jun 2, 2015·5 cites·65 claims
- 3681US9799387B1Integrated circuits with programmable memory cells and methods for programming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Oct 24, 2017·5 cites·20 claims
- 3781US8797792B2Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionQUALCOMM INC·Filed 2013·Granted Aug 5, 2014·6 cites·20 claims
- 3881US8558331B2Magnetic tunnel junction deviceZHU XIAOCHUN·Filed 2009·Granted Oct 15, 2013·8 cites·37 claims
- 3979US10121959B1FDSOI STT-MRAM designGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Nov 6, 2018·3 cites·17 claims
- 4079US10103319B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2017·Granted Oct 16, 2018·1 cites·16 claims
- 4179US9548446B2Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)QUALCOMM INC·Filed 2016·Granted Jan 17, 2017·4 cites·6 claims
- 4279US8913423B2Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM)QUALCOMM INC·Filed 2013·Granted Dec 16, 2014·3 cites·36 claims
- 4379US8638590B2Resistance based memory having two-diode access deviceHAO WUYANG·Filed 2010·Granted Jan 28, 2014·6 cites·14 claims
- 4478US9214214B2Physically unclonable function based on the random logical state of magnetoresistive random-access memoryQUALCOMM INC·Filed 2013·Granted Dec 15, 2015·4 cites·30 claims
- 4578US9064589B2Three port MTJ structure and integrationLI XIA·Filed 2012·Granted Jun 23, 2015·3 cites·23 claims
- 4677US9961754B2Method for removing of residual charge, X-ray imaging method and apparatus using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 1, 2018·2 cites·18 claims
- 4777US9455014B1Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systemsQUALCOMM INC·Filed 2015·Granted Sep 27, 2016·4 cites·20 claims
- 4877US7829923B2Magnetic tunnel junction and method of fabricationQUALCOMM INC·Filed 2008·Granted Nov 9, 2010·8 cites·24 claims
- 4976US9923137B2Magnetic memory with tunneling magnetoresistance enhanced spacer layerGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Mar 20, 2018·2 cites·20 claims
- 5076US9679663B2OTP cell with reversed MTJ connectionQUALCOMM INC·Filed 2016·Granted Jun 13, 2017·3 cites·6 claims
Showing the top 50 of 102 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →