Inventor · disambiguated record
Martin Jeffrey Binns
Also filed as: BINNS MARTIN J · BINNS MARTIN JEFFREY
7 granted patents·1 pending application·124 citations·filing 1999–2013
87Inventor score
Top patents by PatentIndex Score
8 records- 0194US7135351B2Method for controlling of thermal donor formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Nov 14, 2006·26 cites·36 claims
- 0284US6897084B2Control of oxygen precipitate formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted May 24, 2005·29 cites·24 claims
- 0383US10060045B2Fabrication of indium-doped silicon by the czochralski methodCORNER STAR LTD·Filed 2013·Granted Aug 28, 2018·4 cites·22 claims
- 0468US6361619B1Thermally annealed wafers having improved internal getteringMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Mar 26, 2002·31 cites·25 claims
- 0567US6686260B2Process for producing thermally annealed wafers having improved internal getteringMEMC ELECTRONICS MATERIALS INC·Filed 2002·Granted Feb 3, 2004·10 cites·30 claims
- 0662US6743289B2Thermal annealing process for producing low defect density single crystal siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Jun 1, 2004·8 cites·54 claims
- 0752US6416836B1Thermally annealed, low defect density single crystal siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Jul 9, 2002·16 cites·18 claims
- 0837US2003192469A1Process for controlling denuded zone depth in an ideal oxygen precipitating silicon waferMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
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