Inventor · disambiguated record
Dev Alok
Also filed as: ALOK DEV
16 granted patents·2 pending applications·487 citations·filing 1993–2002
95Inventor score
Top patents by PatentIndex Score
18 records- 0187US5449925AVoltage breakdown resistant monocrystalline silicon carbide semiconductor devicesUNIV NORTH CAROLINA STATE·Filed 1994·Granted Sep 12, 1995·55 cites·17 claims
- 0286US6303508B1Superior silicon carbide integrated circuits and method of fabricatingPHILIPS ELECTRONICS NA·Filed 1999·Granted Oct 16, 2001·70 cites·9 claims
- 0383US6373076B1Passivated silicon carbide devices with low leakage current and method of fabricatingPHILIPS ELECTRONICS NA·Filed 1999·Granted Apr 16, 2002·46 cites·20 claims
- 0480US5436174AMethod of forming trenches in monocrystalline silicon carbideUNIV NORTH CAROLINA STATE·Filed 1993·Granted Jul 25, 1995·71 cites·9 claims
- 0579US5635412AMethods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devicesUNIV NORTH CAROLINA STATE·Filed 1995·Granted Jun 3, 1997·51 cites·21 claims
- 0672US6323506B1Self-aligned silicon carbide LMOSFETPHILIPS ELECTRONICS NA·Filed 1999·Granted Nov 27, 2001·40 cites·8 claims
- 0772US5318915AMethod for forming a p-n junction in silicon carbideUNIV NORTH CAROLINA STATE·Filed 1993·Granted Jun 7, 1994·49 cites·10 claims
- 0870US6559068B2Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted May 6, 2003·16 cites·27 claims
- 0968US6703276B2Passivated silicon carbide devices with low leakage current and method of fabricatingKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Mar 9, 2004·12 cites·14 claims
- 1067US6504184B2Superior silicon carbide integrated circuits and method of fabricatingKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jan 7, 2003·9 cites·5 claims
- 1164US6620697B1Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the sameKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Sep 16, 2003·13 cites·5 claims
- 1262US6011278ALateral silicon carbide semiconductor device having a drift region with a varying doping levelPHILIPS ELECTRONICS NA·Filed 1997·Granted Jan 4, 2000·22 cites·5 claims
- 1354US6355944B1Silicon carbide LMOSFET with gate reach-through protectionPHILIPS ELECTRONICS NA·Filed 1999·Granted Mar 12, 2002·19 cites·9 claims
- 1440US2002130325A1Method of achieving higher inversion layer mobility in novel silicon carbide semiconductor devicesPHILIPS ELECTRONICS NA·Filed 2002·Application pending·0 cites
- 1539US6593594B1Silicon carbide n-channel power LMOSFETKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Jul 15, 2003·7 cites·6 claims
- 1636US2003059718A1Method for forming a contact window in a semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Application pending·0 cites
- 1735US6407014B1Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devicesPHILIPS ELECTRONICS NA·Filed 1999·Granted Jun 18, 2002·4 cites·21 claims
- 1833US6096663AMethod of forming a laterally-varying charge profile in silicon carbide substratePHILIPS ELECTRONICS NA·Filed 1998·Granted Aug 1, 2000·3 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →