Inventor · disambiguated record
Shunsuke Fukunaga
Also filed as: FUKUNAGA SHUNSUKE
12 granted patents·6 pending applications·36 citations·filing 2015–2021
86Inventor score
Top patents by PatentIndex Score
18 records- 0194US9929265B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Mar 27, 2018·14 cites·6 claims
- 0289US9391194B1High voltage vertical FPMOS fetsSANKEN ELECTRIC CO LTD·Filed 2015·Granted Jul 12, 2016·8 cites·20 claims
- 0388US9825027B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Nov 21, 2017·7 cites·7 claims
- 0481US9818696B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Nov 14, 2017·4 cites·8 claims
- 0577US10580861B2Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2018·Granted Mar 3, 2020·2 cites·9 claims
- 0667US10312363B1Semiconductor device having improved edge trench, source electrode and gate electrode structuresSANKEN ELECTRIC CO LTD·Filed 2018·Granted Jun 4, 2019·1 cites·8 claims
- 0761US11245006B2Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2019·Granted Feb 8, 2022·0 cites·20 claims
- 0848US2016247879A1Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2016·Application pending·0 cites
- 0946US11967643B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·17 claims
- 1046US10573741B1Vertical power MOSFET device having doped regions between insulated trenches and a junction arranged therebetweenSANKEN ELECTRIC CO LTD·Filed 2018·Granted Feb 25, 2020·0 cites·10 claims
- 1143US10892359B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jan 12, 2021·0 cites·9 claims
- 1243US10361298B2Semiconductor device having improved trench and electrode structuresSANKEN ELECTRIC CO LTD·Filed 2017·Granted Jul 23, 2019·0 cites·10 claims
- 1340US10991815B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Apr 27, 2021·0 cites·5 claims
- 1439US2019148487A1Semiconductor device including partitioning layer extending between gate electrode and source electrodeSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 1537US2018175189A1Semiconductor device including auxiliary structureSANKEN ELECTRIC CO LTD·Filed 2016·Application pending·0 cites
- 1635US2018337172A1Semiconductor DeviceSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 1733US2019165097A1Semiconductor device having through hole, source and gate electrode structuresSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 1831US2016372558A1High Voltage Vertical FPMOS FetsSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →