Inventor · disambiguated record
Chia-Jong Liu
Also filed as: LIU CHIA-JONG
22 granted patents·5 pending applications·72 citations·filing 2011–2025
94Inventor score
Top patents by PatentIndex Score
27 records- 0195US11545560B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 3, 2023·4 cites·9 claims
- 0293US9093477B1Implantation processing step for a recess in finFETUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 28, 2015·14 cites·20 claims
- 0389US10943991B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Mar 9, 2021·4 cites·8 claims
- 0489US9385191B2FINFET structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 5, 2016·10 cites·5 claims
- 0587US9691901B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 27, 2017·6 cites·12 claims
- 0686US9899523B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 20, 2018·5 cites·19 claims
- 0786US9786510B2Fin-shaped structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 10, 2017·5 cites·6 claims
- 0886US9502530B2Method of manufacturing semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·4 cites·6 claims
- 0984US12300743B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted May 13, 2025·0 cites·7 claims
- 1080US8772120B2Semiconductor processCHANG CHUNG-FU·Filed 2012·Granted Jul 8, 2014·5 cites·19 claims
- 1180US2025241038A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1278US12021134B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jun 25, 2024·0 cites·14 claims
- 1377US9224864B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 29, 2015·4 cites·19 claims
- 1476US8753902B1Method of controlling etching process for forming epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 17, 2014·3 cites·13 claims
- 1573US10050146B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Aug 14, 2018·2 cites·5 claims
- 1668US8829575B2Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2012·Granted Sep 9, 2014·2 cites·20 claims
- 1766US9214395B2Method of manufacturing semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 2013·Granted Dec 15, 2015·1 cites·9 claims
- 1865US9634125B2Fin field effect transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 25, 2017·1 cites·12 claims
- 1964US10930517B2Method of forming fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 23, 2021·0 cites·7 claims
- 2064US9006058B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Apr 14, 2015·2 cites·12 claims
- 2158US10418251B2Method of forming fin-shaped structure having ladder-shaped cross-sectional profileUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 17, 2019·0 cites·5 claims
- 2255US10529856B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 7, 2020·0 cites·19 claims
- 2349US9397190B2Fabrication method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 19, 2016·0 cites·20 claims
- 2445US2015357436A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2545US2016049496A1Mos transistor and semiconductor process for forming epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2643US2016049467A1Fin field effect transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2737US2013089962A1Semiconductor processCHANG CHUNG-FU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →