Inventor · disambiguated record
Peter M. Fryer
Also filed as: FRYER PETER · FRYER PETER M
18 granted patents·872 citations·filing 1992–2004
96Inventor score
Top patents by PatentIndex Score
18 records- 0196US6656308B2Process of fabricating a precision microcontact printing stampIBM·Filed 2002·Granted Dec 2, 2003·74 cites·19 claims
- 0295US5281485AStructure and method of making Alpha-Ta in thin filmsIBM·Filed 1993·Granted Jan 25, 1994·213 cites·26 claims
- 0395US5221449AMethod of making Alpha-Ta thin filmsIBM·Filed 1992·Granted Jun 22, 1993·206 cites·13 claims
- 0493US6620719B1Method of forming ohmic contacts using a self doping layer for thin-film transistorsIBM·Filed 2000·Granted Sep 16, 2003·82 cites·27 claims
- 0587US6380101B1Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereofIBM·Filed 2000·Granted Apr 30, 2002·51 cites·19 claims
- 0686US6420282B1Passivation of copper with ammonia-free silicon nitride and application to TFT/LCDIBM·Filed 2000·Granted Jul 16, 2002·28 cites·19 claims
- 0785US6791144B1Thin film transistor and multilayer film structure and manufacturing method of sameIBM·Filed 2000·Granted Sep 14, 2004·32 cites·25 claims
- 0885US6783717B2Process of fabricating a precision microcontact printing stampIBM·Filed 2002·Granted Aug 31, 2004·23 cites·12 claims
- 0975US6731064B2Yield enchancement pixel structure for active matrix organic light-emitting diode displaysIBM·Filed 2002·Granted May 4, 2004·20 cites·24 claims
- 1073US5912506AMulti-layer metal sandwich with taper and reduced etch bias and method for forming sameIBM·Filed 1997·Granted Jun 15, 1999·42 cites·12 claims
- 1171US6866791B1Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereofIBM·Filed 2000·Granted Mar 15, 2005·17 cites·28 claims
- 1271US5831283APassivation of copper with ammonia-free silicon nitride and application to TFT/LCDIBM·Filed 1996·Granted Nov 3, 1998·28 cites·13 claims
- 1369US6632536B2Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displaysIBM·Filed 2000·Granted Oct 14, 2003·9 cites·13 claims
- 1469US6165917APassivation of copper with ammonia-free silicon nitride and application to TFT/LCDIBM·Filed 1997·Granted Dec 26, 2000·25 cites·11 claims
- 1564US7037769B2Thin film transistor and multilayer film structure and manufacturing method of sameIBM·Filed 2004·Granted May 2, 2006·9 cites·12 claims
- 1662US6545295B2Transistor having ammonia free nitride between its gate electrode and gate insulation layersIBM·Filed 2002·Granted Apr 8, 2003·5 cites·7 claims
- 1757US6881366B2Process of fabricating a precision microcontact printing stampIBM·Filed 2002·Granted Apr 19, 2005·6 cites·17 claims
- 1844US6890599B2Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displaysINTELLECTUAL BUSINESS MACHINES·Filed 2003·Granted May 10, 2005·2 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when Peter M. Fryer files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →