Inventor · disambiguated record
Clarence W. Teng
Also filed as: TENG CLARENCE · TENG CLARENCE W · TENG CLARENCE W-H
37 granted patents·1,244 citations·filing 1984–1997
98Inventor score
Files withTEXAS INSTRUMENTS INC37
Top patents by PatentIndex Score
37 records- 0194US4963502AMethod of making oxide-isolated source/drain transistorTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 16, 1990·101 cites·7 claims
- 0293US4631803AMethod of fabricating defect free trench isolation devicesTEXAS INSTRUMENTS INC·Filed 1985·Granted Dec 30, 1986·124 cites·14 claims
- 0391US4656732AIntegrated circuit fabrication processTEXAS INSTRUMENTS INC·Filed 1984·Granted Apr 14, 1987·78 cites·8 claims
- 0487US4864375ADram cell and methodTEXAS INSTRUMENTS INC·Filed 1988·Granted Sep 5, 1989·68 cites·4 claims
- 0586US5043778AOxide-isolated source/drain transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Aug 27, 1991·76 cites·48 claims
- 0685US4892614AIntegrated circuit isolation processTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 9, 1990·69 cites·14 claims
- 0784US4830978ADram cell and methodTEXAS INSTRUMENTS INC·Filed 1987·Granted May 16, 1989·65 cites·12 claims
- 0883US4987093AThrough-field implant isolated devices and methodTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 22, 1991·59 cites·3 claims
- 0978US4580330AIntegrated circuit isolationTEXAS INSTRUMENTS INC·Filed 1984·Granted Apr 8, 1986·44 cites·9 claims
- 1077US5087591AContact etch processTEXAS INSTRUMENTS INC·Filed 1988·Granted Feb 11, 1992·47 cites·26 claims
- 1176US4842675AIntegrated circuit isolation processTEXAS INSTRUMENTS INC·Filed 1986·Granted Jun 27, 1989·45 cites·32 claims
- 1275US4978634AMethod of making trench DRAM cell with stacked capacitor and buried lateral contactTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 18, 1990·33 cites·5 claims
- 1372US4561172AIntegrated circuit fabrication method utilizing selective etching and oxidation to form isolation regionsTEXAS INSTRUMENTS INC·Filed 1984·Granted Dec 31, 1985·34 cites·12 claims
- 1470US5225363ATrench capacitor DRAM cell and method of manufactureTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 6, 1993·29 cites·2 claims
- 1568US5894145AMultiple substrate bias random access memory deviceTEXAS INSTRUMENTS INC·Filed 1997·Granted Apr 13, 1999·23 cites·23 claims
- 1667US4538343AChannel stop isolation technology utilizing two-step etching and selective oxidation with sidewall maskingTEXAS INSTRUMENTS INC·Filed 1984·Granted Sep 3, 1985·27 cites·13 claims
- 1765US5352913ADynamic memory storage capacitor having reduced gated diode leakageTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 4, 1994·20 cites·3 claims
- 1865US5156992AProcess for forming poly-sheet pillar transistor DRAM cellTEXAS INSTRUMENTS INC·Filed 1991·Granted Oct 20, 1992·23 cites·27 claims
- 1961US5111259ATrench capacitor memory cell with curved capacitorsTEXAS INSTRUMENTS INC·Filed 1989·Granted May 5, 1992·27 cites·20 claims
- 2059US5105245ATrench capacitor DRAM cell with diffused bit lines adjacent to a trenchTEXAS INSTRUMENTS INC·Filed 1988·Granted Apr 14, 1992·16 cites·11 claims
- 2158US5202279APoly sidewall process to reduce gated diode leakageTEXAS INSTRUMENTS INC·Filed 1990·Granted Apr 13, 1993·16 cites·8 claims
- 2258US5198383AMethod of fabricating a composed pillar transistor DRAM CellTEXAS INSTRUMENTS INC·Filed 1991·Granted Mar 30, 1993·19 cites·20 claims
- 2356US5671175ACapacitor over bitline DRAM cellTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 23, 1997·21 cites·16 claims
- 2455US5587614AMicroplanarization of rough electrodes by thin amorphous layersTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 24, 1996·21 cites·7 claims
- 2555US4983226ADefect free trench isolation devices and method of fabricationTEXAS INSTRUMENTS INC·Filed 1990·Granted Jan 8, 1991·24 cites·8 claims
- 2655US4916524ADram cell and methodTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 10, 1990·20 cites·12 claims
- 2754US4947227ALatch-up resistant CMOS structureTEXAS INSTRUMENTS INC·Filed 1985·Granted Aug 7, 1990·14 cites·6 claims
- 2851US5595925AMethod for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed thereinTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 21, 1997·11 cites·4 claims
- 2949US5028980ATrench capacitor with expanded areaTEXAS INSTRUMENTS INC·Filed 1990·Granted Jul 2, 1991·12 cites·8 claims
- 3048US5057887AHigh density dynamic ram cellTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 15, 1991·9 cites·10 claims
- 3148US4660278AProcess of making IC isolation structureTEXAS INSTRUMENTS INC·Filed 1985·Granted Apr 28, 1987·15 cites·12 claims
- 3247US5061653ATrench isolation processTEXAS INSTRUMENTS INC·Filed 1990·Granted Oct 29, 1991·16 cites·8 claims
- 3347US4890147AThrough-field implant isolated devices and methodTEXAS INSTRUMENTS INC·Filed 1987·Granted Dec 26, 1989·14 cites·3 claims
- 3445US4958206ADiffused bit line trench capacitor dram cellTEXAS INSTRUMENTS INC·Filed 1988·Granted Sep 18, 1990·9 cites·15 claims
- 3538US5364812AHigh density dynamic RAM cellTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 15, 1994·7 cites·10 claims
- 3635US5049519ALatch-up resistant CMOS processTEXAS INSTRUMENTS INC·Filed 1989·Granted Sep 17, 1991·4 cites·18 claims
- 3734US4958212ATrench memory cellTEXAS INSTRUMENTS INC·Filed 1988·Granted Sep 18, 1990·4 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →