Inventor · disambiguated record
Glen Wilk
Also filed as: WILK GLEN · WILK GLEN D · WILK GLEN DAVID
49 granted patents·8 pending applications·4,004 citations·filing 1997–2024
99Inventor score
Top patents by PatentIndex Score
57 records- 0199US6291282B1Method of forming dual metal gate structures or CMOS devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Sep 18, 2001·387 cites·9 claims
- 0299US6020243AZirconium and/or hafnium silicon-oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 1, 2000·494 cites·33 claims
- 0399US6013553AZirconium and/or hafnium oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 11, 2000·1.1k cites·32 claims
- 0498US7795160B2ALD of metal silicate filmsASM INC·Filed 2006·Granted Sep 14, 2010·412 cites·31 claims
- 0597US6291867B1Zirconium and/or hafnium silicon-oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 18, 2001·248 cites·16 claims
- 0696US6544875B1Chemical vapor deposition of silicate high dielectric constant materialsTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 8, 2003·107 cites·24 claims
- 0796US6291866B1Zirconium and/or hafnium oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 18, 2001·165 cites·20 claims
- 0895US7608549B2Method of forming non-conformal layersASM INC·Filed 2006·Granted Oct 27, 2009·40 cites·26 claims
- 0995US6255150B1Use of crystalline SiOx barriers for Si-based resonant tunneling diodesTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 3, 2001·141 cites·12 claims
- 1094US6770536B2Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrateAGERE SYSTEMS INC·Filed 2002·Granted Aug 3, 2004·77 cites·10 claims
- 1194US6495474B1Method of fabricating a dielectric layerAGERE SYSTEMS INC·Filed 2000·Granted Dec 17, 2002·81 cites·19 claims
- 1293US8334218B2Method of forming non-conformal layersVAN NOOTEN SEBASTIAN E·Filed 2009·Granted Dec 18, 2012·58 cites·15 claims
- 1392US6552388B2Hafnium nitride gate dielectricTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 22, 2003·49 cites·14 claims
- 1492US6150242AMethod of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diodeTEXAS INSTRUMENTS INC·Filed 1999·Granted Nov 21, 2000·125 cites·12 claims
- 1590US6436801B1Hafnium nitride gate dielectricTEXAS INSTRUMENTS INC·Filed 2000·Granted Aug 20, 2002·40 cites·16 claims
- 1689US8268409B2Plasma-enhanced deposition of metal carbide filmsELERS KAI-ERIK·Filed 2007·Granted Sep 18, 2012·14 cites·40 claims
- 1789US7666474B2Plasma-enhanced pulsed deposition of metal carbide filmsASM INC·Filed 2008·Granted Feb 23, 2010·17 cites·31 claims
- 1889US6723581B1Semiconductor device having a high-K gate dielectric and method of manufacture thereofAGERE SYSTEMS INC·Filed 2002·Granted Apr 20, 2004·48 cites·20 claims
- 1988US7972977B2ALD of metal silicate filmsASM INC·Filed 2007·Granted Jul 5, 2011·7 cites·15 claims
- 2087US6797525B2Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal processAGERE SYSTEMS INC·Filed 2002·Granted Sep 28, 2004·31 cites·18 claims
- 2182US7202166B2Surface preparation prior to deposition on germaniumASM INC·Filed 2004·Granted Apr 10, 2007·20 cites·24 claims
- 2281US6291283B1Method to form silicates as high dielectric constant materialsTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 18, 2001·49 cites·23 claims
- 2379US6841439B1High permittivity silicate gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 11, 2005·52 cites·5 claims
- 2476US6258637B1Method for thin film deposition on single-crystal semiconductor substratesTEXAS INSTRUMENTS INC·Filed 1999·Granted Jul 10, 2001·40 cites·12 claims
- 2576US6248621B1Method of growing high-quality crystalline silicon quantum wells for RTD structuresTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 19, 2001·40 cites·12 claims
- 2675US6560377B2Non-hermetic packaging for lithium niobate-based devicesAGERE SYSTEMS INC·Filed 2001·Granted May 6, 2003·18 cites·17 claims
- 2774US7799680B2Surface preparation prior to deposition on germaniumASM INC·Filed 2007·Granted Sep 21, 2010·3 cites·18 claims
- 2873US6825538B2Semiconductor device using an insulating layer having a seed layerAGERE SYSTEMS INC·Filed 2002·Granted Nov 30, 2004·15 cites·5 claims
- 2973US6479404B1Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layerAGERE SYSTEMS INC·Filed 2000·Granted Nov 12, 2002·16 cites·13 claims
- 3071US7115461B2High permittivity silicate gate dielectricTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 3, 2006·13 cites·20 claims
- 3161US6020247AMethod for thin film deposition on single-crystal semiconductor substratesTEXAS INSTRUMENTS INC·Filed 1997·Granted Feb 1, 2000·22 cites·16 claims
- 3260US8563444B2ALD of metal silicate filmsWANG CHANG-GONG·Filed 2011·Granted Oct 22, 2013·0 cites·15 claims
- 3359US6420729B2Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectricsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 16, 2002·6 cites·8 claims
- 3458US6245606B1Low temperature method for forming a thin, uniform layer of aluminum oxideTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 12, 2001·21 cites·20 claims
- 3557US6821835B2Chemical vapor deposition of silicate high dielectric constant materialsTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 23, 2004·4 cites·25 claims
- 3656US2024096633A1Methods and assemblies for selectively depositing transition metalsASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3755US2024282572A1Selective deposition of metal oxideASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3854US6613698B2Lower temperature method for forming high quality silicon-nitrogen dielectricsTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 2, 2003·3 cites·21 claims
- 3954US6498502B2Apparatus and method for evaluating semiconductor structures and devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Dec 24, 2002·12 cites·3 claims
- 4054US6277681B1Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectricsTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 21, 2001·18 cites·13 claims
- 4152US6468856B2High charge storage density integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 22, 2002·3 cites·15 claims
- 4252US2022254628A1Method and system for forming boron nitride on a surface of a substrateASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 4349US6534348B1Ultrascaled MIS transistors fabricated using silicon-on-lattice-matched insulator approachTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 18, 2003·11 cites·18 claims
- 4447US7223677B2Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrateAGERE SYSTEMS INC·Filed 2004·Granted May 29, 2007·1 cites·17 claims
- 4544US7253063B2Method of fabricating a composite gate dielectric layerLUCENT TECHNOLOGIES INC·Filed 2002·Granted Aug 7, 2007·2 cites·26 claims
- 4644US2005042846A1Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal processFiled 2004·Application pending·0 cites
- 4743US6730977B2Lower temperature method for forming high quality silicon-nitrogen dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted May 4, 2004·0 cites·1 claims
- 4843US2004241947A1Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrateAGERE SYSTEMS INC·Filed 2004·Application pending·0 cites
- 4942US6040230AMethod of forming a nano-rugged silicon-containing layerTEXAS INSTRUMENTS INC·Filed 1998·Granted Mar 21, 2000·7 cites·8 claims
- 5041US6734068B2Method to form silicates as high dielectric constant materialsTEXAS INSTRUMENTS INC·Filed 2001·Granted May 11, 2004·0 cites·4 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →