Inventor · disambiguated record
Adam Amali
Also filed as: AMALI ADAM · AMALI ADAM I
16 granted patents·2 pending applications·220 citations·filing 2002–2024
92Inventor score
Top patents by PatentIndex Score
18 records- 0195US7397083B2Trench fet with self aligned source and contactINT RECTIFIER CORP·Filed 2007·Granted Jul 8, 2008·38 cites·5 claims
- 0295US6593622B2Power mosfet with integrated drivers in a common packageINT RECTIFIER CORP·Filed 2002·Granted Jul 15, 2003·99 cites·17 claims
- 0392US9620583B2Power semiconductor device with source trench and termination trench implantsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 11, 2017·13 cites·20 claims
- 0481US7045859B2Trench fet with self aligned source and contactINT RECTIFIER CORP·Filed 2002·Granted May 16, 2006·23 cites·4 claims
- 0576US7566622B2Early contact, high cell density processINT RECTIFIER CORP·Filed 2006·Granted Jul 28, 2009·7 cites·20 claims
- 0674US9627328B2Semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 0773US6921699B2Method for manufacturing a semiconductor device with a trench terminationINT RECTIFIER CORP·Filed 2003·Granted Jul 26, 2005·20 cites·20 claims
- 0872US10727331B2Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 28, 2020·1 cites·12 claims
- 0969US7943990B2Power semiconductor device with interconnected gate trenchesINT RECTIFIER CORP·Filed 2006·Granted May 17, 2011·5 cites·19 claims
- 1065US7301200B2Trench FET with self aligned source and contactINT RECTIFIER CORP·Filed 2006·Granted Nov 27, 2007·2 cites·7 claims
- 1160US7557395B2Trench MOSFET technology for DC-DC converter applicationsINT RECTIFIER CORP·Filed 2004·Granted Jul 7, 2009·10 cites·7 claims
- 1260US2025301697A1Transistor Device Having a Termination Region and Method of Producing the Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1359US10868173B2Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Dec 15, 2020·0 cites·25 claims
- 1454US2024047517A1Power semiconductor device having counter-doped regions in both an active cell region and an inactive cell regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 1550US11296218B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 1650US9966464B2Method of forming a semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted May 8, 2018·0 cites·19 claims
- 1746USRE41719EPower MOSFET with integrated drivers in a common packageINT RECTIFIER CORP·Filed 2005·Granted Sep 21, 2010·0 cites·18 claims
- 1838US10141415B2Combined gate and source trench formation and related structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Nov 27, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →