Inventor · disambiguated record
Andy Strachan
Also filed as: STRACHAN ANDY
27 granted patents·1 pending application·317 citations·filing 2001–2016
96Inventor score
Top patents by PatentIndex Score
28 records- 0191US6566710B1Power MOSFET cell with a crossed bar shaped body contact areaNAT SEMICONDUCTOR CORP·Filed 2001·Granted May 20, 2003·68 cites·6 claims
- 0288US6586317B1Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltageNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jul 1, 2003·48 cites·21 claims
- 0382US7298159B1Method of measuring the leakage current of a deep trench isolation structureNAT SEMICONDUCTOR CORP·Filed 2005·Granted Nov 20, 2007·15 cites·20 claims
- 0481US6806529B1Memory cell with a capacitive structure as a control gate and method of forming the memory cellNAT SEMICONDUCTOR CORP·Filed 2003·Granted Oct 19, 2004·29 cites·20 claims
- 0580US7192857B1Method of forming a semiconductor structure with non-uniform metal widthsNAT SEMICONDUCTOR CORP·Filed 2005·Granted Mar 20, 2007·8 cites·18 claims
- 0675US6815797B1Silicide bridged anti-fuseNAT SEMICONDUCTOR CORP·Filed 2002·Granted Nov 9, 2004·21 cites·30 claims
- 0774US7960998B2Electrical test structure and method for characterization of deep trench sidewall reliabilityNAT SEMICONDUCTOR CORP·Filed 2008·Granted Jun 14, 2011·5 cites·8 claims
- 0872US6946706B1LDMOS transistor structure for improving hot carrier reliabilityNAT SEMICONDUCTOR CORP·Filed 2003·Granted Sep 20, 2005·19 cites·16 claims
- 0971US7105373B1Vertical photodiode with heavily-doped regions of alternating conductivity typesNAT SEMICONDUCTOR CORP·Filed 2003·Granted Sep 12, 2006·15 cites·24 claims
- 1070US6727547B1Method and device for improving hot carrier reliability of an LDMOS transistor using drain ring over-drive biasNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 27, 2004·15 cites·8 claims
- 1168US7238553B1Method of forming a high-voltage silicon controlled rectifier structure with improved punch through resistanceNAT SEMICONDUCTOR CORP·Filed 2005·Granted Jul 3, 2007·3 cites·17 claims
- 1268US6559507B1Compact ballasting region design for snapback N-MOS ESD protection structure using multiple local N+ region blockingNAT SEMICONDUCTOR CORP·Filed 2001·Granted May 6, 2003·13 cites·17 claims
- 1364US9865584B1Contact array optimization for ESD devicesTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 9, 2018·1 cites·20 claims
- 1464US6919588B1High-voltage silicon controlled rectifier structure with improved punch through resistanceNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jul 19, 2005·9 cites·20 claims
- 1563US7507607B1Method of forming a silicide bridged anti-fuse with a tungsten plug metalization processNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 24, 2009·10 cites·20 claims
- 1663US7488647B1System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor deviceNAT SEMICONDUCTOR CORP·Filed 2005·Granted Feb 10, 2009·2 cites·20 claims
- 1762US7714355B1Method of controlling the breakdown voltage of BSCRs and BJT clampsNAT SEMICONDUCTOR CORP·Filed 2005·Granted May 11, 2010·2 cites·3 claims
- 1861US6844585B1Circuit and method of forming the circuit having subsurface conductorsNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jan 18, 2005·6 cites·20 claims
- 1960US7214992B1Multi-source, multi-gate MOS transistor with a drain region that is wider than the source regionsNAT SEMICONDUCTOR CORP·Filed 2004·Granted May 8, 2007·9 cites·10 claims
- 2059US6933562B1Power transistor structure with non-uniform metal widthsNAT SEMICONDUCTOR CORP·Filed 2003·Granted Aug 23, 2005·7 cites·20 claims
- 2158US6979879B1Trim zener using double poly processNAT SEMICONDUCTOR CORP·Filed 2004·Granted Dec 27, 2005·8 cites·18 claims
- 2254US7989883B1System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor deviceNAT SEMICONDUCTOR CORP·Filed 2009·Granted Aug 2, 2011·0 cites·20 claims
- 2350US7037814B1Single mask control of doping levelsNAT SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·2 cites·7 claims
- 2449US7867871B1System and method for increasing breakdown voltage of LOCOS isolated devicesNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jan 11, 2011·0 cites·20 claims
- 2547US6864582B1Semiconductor interconnect and method of providing interconnect using a contact regionNAT SEMICONDUCTOR CORP·Filed 2002·Granted Mar 8, 2005·2 cites·4 claims
- 2645US7479435B1Method of forming a circuit having subsurface conductorsNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jan 20, 2009·0 cites·10 claims
- 2745US2011065256A1System and method for increasing breakdown voltage of locos isolated devicesNAT SEMICONDUCTOR CORP·Filed 2010·Application pending·0 cites
- 2835US6639784B1Wedge-shaped high density capacitor and method of making the capacitorNAT SEMICONDUCTOR CORP·Filed 2002·Granted Oct 28, 2003·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →