Inventor · disambiguated record
Yasutomo Kajikawa
Also filed as: KAJIKAWA YASUTOMO
9 granted patents·189 citations·filing 1987–2002
89Inventor score
Files withMITSUBISHI ELECTRIC CORP9
Top patents by PatentIndex Score
9 records- 0193US4789643AMethod of manufacturing a heterojunction bipolar transistor involving etch and refillMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Dec 6, 1988·90 cites·5 claims
- 0269US5714006AMethod of growing compound semiconductor layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 3, 1998·36 cites·12 claims
- 0361US6506618B1Method of forming a GaInNAs layerMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jan 14, 2003·7 cites·16 claims
- 0461US5835516ASemiconductor laser device and method of fabricating semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 10, 1998·24 cites·28 claims
- 0548US4896203AHeterojunction bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 23, 1990·10 cites·5 claims
- 0644US4824805AMethod of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 25, 1989·10 cites·8 claims
- 0736US5841156ASemiconductor device including T1 GaAs layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 24, 1998·6 cites·4 claims
- 0833US5673283ASemiconductor device and fabricating method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 30, 1997·5 cites·5 claims
- 0931US6275515B1Semiconductor laser device and method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 14, 2001·1 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →