Inventor · disambiguated record
Mark D. Levy
Also filed as: LEVY MARK · LEVY MARK D · LEVY MARK DAVID
60 granted patents·19 pending applications·99 citations·filing 1996–2025
97Inventor score
Files withGLOBALFOUNDRIES US INC67IBM6GLOBALFOUNDRIES INC3GAMBINO JEFFREY P2SOCIETY OF AMERICAN INDEPENDEN1
Top patents by PatentIndex Score
79 records- 0197US11152520B1Photodetector with reflector with air gap adjacent photodetecting regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 19, 2021·4 cites·19 claims
- 0296US11316064B2Photodiode and/or PIN diode structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 26, 2022·4 cites·19 claims
- 0394US11972999B2Unlanded thermal dissipation pillar adjacent active contactGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 0493US11422303B2Waveguide with attenuatorGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 23, 2022·2 cites·18 claims
- 0592US11469225B2Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientationGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 0690US11536914B2Photodetector array with diffraction gratings having different pitchesGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 27, 2022·2 cites·19 claims
- 0788US11923446B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 5, 2024·1 cites·17 claims
- 0888US11437522B2Field-effect transistors with a polycrystalline body in a shallow trench isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 6, 2022·2 cites·14 claims
- 0988US11362201B1Heterojunction bipolar transistors with undercut extrinsic base regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 1086US10312356B1Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
- 1186US7823106B2Variable performance ranking and modification in design for manufacturability of circuitsIBM·Filed 2008·Granted Oct 26, 2010·26 cites·20 claims
- 1284US12142686B2Field effect transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 12, 2024·1 cites·18 claims
- 1383US11264457B1Isolation trenches augmented with a trap-rich layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 1482US12419098B2Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientationGLOBALFOUNDRIES US INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 1582US9059233B2Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation regionIBM·Filed 2013·Granted Jun 16, 2015·4 cites·16 claims
- 1682US8729664B2Discontinuous guard ringGAMBINO JEFFREY P·Filed 2012·Granted May 20, 2014·6 cites·9 claims
- 1782US2025341676A1Photonic integrated circuit including plurality of discrete optical guard elementsGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
- 1881US12389622B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 1981US12243935B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2081US11322639B2Avalanche photodiodeGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·1 cites·19 claims
- 2181US11282740B2Bulk semiconductor structure with a multi-level polycrystalline semiconductor region and methodGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 2281US11195715B2Epitaxial growth constrained by a templateGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 7, 2021·1 cites·20 claims
- 2379US10833072B1Heterojunction bipolar transistors having bases with different elevationsGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·2 cites·14 claims
- 2477US11049932B2Semiconductor isolation structures comprising shallow trench and deep trench isolationGLOBALFOUNDRIES US INC·Filed 2018·Granted Jun 29, 2021·2 cites·18 claims
- 2577US9231089B2Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation regionIBM·Filed 2015·Granted Jan 5, 2016·2 cites·20 claims
- 2675US12087764B2Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientationGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2775US12002878B2Implanted isolation for device integration on a common substrateGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2873US12342626B2Switches in bulk substrateGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 24, 2025·0 cites·19 claims
- 2972US12183814B1Multi-channel transistorGLOBALFOUNDRIES US INC·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 3070US2024094465A1Photonic integrated circuit including plurality of discrete optical guard elementsGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 3169US12491511B2Microfluidic channel structure and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 3269US12119383B2Transistor with multi-level self-aligned gate and source/drain terminals and methodsGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 15, 2024·0 cites·15 claims
- 3368US12339247B2Field effect transistor with buried fluid-based gate and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 3468US12154956B1Structure including multi-level field plate and method of forming the structureGLOBALFOUNDRIES US INC·Filed 2024·Granted Nov 26, 2024·0 cites·16 claims
- 3568US11569374B2Implanted isolation for device integration on a common substrateGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 31, 2023·0 cites·17 claims
- 3667US11605649B2Switches in bulk substrateGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 14, 2023·0 cites·8 claims
- 3766US12411105B2Semiconductor structure with frontside port and cavity features for conveying sample to sensing elementGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 3864US12386115B2Compound-semiconductor waveguides with airgap claddingGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 3964US11502214B2Photodetectors used with broadband signalGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 15, 2022·0 cites·20 claims
- 4063US12281996B2Semiconductor structure including photodiode-based fluid sensor and methodsGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 22, 2025·0 cites·20 claims
- 4163US11581450B2Photodiode and/or pin diode structures with one or more vertical surfacesGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 14, 2023·0 cites·20 claims
- 4262US11567277B1Distributed Bragg reflectors including periods with airgapsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 4362US8592244B2Pixel sensor cells and methods of manufacturingGAMBINO JEFFREY P·Filed 2011·Granted Nov 26, 2013·0 cites·18 claims
- 4461US11881506B2Gate structures with air gap isolation featuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 4561US11646351B2Transistor with multi-level self-aligned gate and source/drain terminals and methodsGLOBALFOUNDRIES US INC·Filed 2021·Granted May 9, 2023·0 cites·10 claims
- 4660US12040252B2Microfluidic channels sealed with directionally-grown plugsGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4759US11768337B2Couplers including a waveguide core with integrated airgapsGLOBALFOUNDRIES US INC·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 4858US11569170B2Substrate with a buried conductor under an active region for enhanced thermal conductivity and RF shieldingGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 4958US2025079345A1Seal rings for a wide band-gap semiconductor layer stackGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 5058US2025142860A1High electron mobility transistor with regrown barrier structureGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
Showing the top 50 of 79 patent records by PatentIndex Score.
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