Inventor · disambiguated record
Daesu Lee
Also filed as: LEE DAESU
6 granted patents·3 pending applications·20 citations·filing 2012–2024
74Inventor score
Files withWISCONSIN ALUMNI RES FOUND5SAMSUNG ELECTRONICS CO LTD2NOH TAE WON1POSTECH RES & BUSINESS DEV FOUND1
Top patents by PatentIndex Score
9 records- 0193US9627490B1Epitaxial growth of high quality vanadium dioxide films with template engineeringWISCONSIN ALUMNI RES FOUND·Filed 2015·Granted Apr 18, 2017·17 cites·15 claims
- 0283US9972687B1High quality vanadium dioxide filmsWISCONSIN ALUMNI RES FOUND·Filed 2017·Granted May 15, 2018·3 cites·17 claims
- 0367US10649240B2Vanadium dioxide-based optical and radiofrequency switchesWISCONSIN ALUMNI RES FOUND·Filed 2019·Granted May 12, 2020·0 cites·5 claims
- 0466US2024417273A1Perovskite oxide thin film using a selective a-site atomic gradient and method of preparation thereofPOSTECH RES & BUSINESS DEV FOUND·Filed 2024·Application pending·0 cites
- 0561US10216013B2Vanadium dioxide-based optical and radiofrequency switchesWISCONSIN ALUMNI RES FOUND·Filed 2017·Granted Feb 26, 2019·0 cites·16 claims
- 0661US2025241032A1Diode and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0761US2024349623A1Spin orbit torque materials, magnetic memory device including the same, and method for fabricating the spin orbit torque materialsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0845US11335781B2Vanadium dioxide heterostructures having an isostructural metal-insulator transitionWISCONSIN ALUMNI RES FOUND·Filed 2017·Granted May 17, 2022·0 cites·19 claims
- 0931US9105345B2Ferroelectric memory device and method for manufacturing sameNOH TAE WON·Filed 2012·Granted Aug 11, 2015·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →