Inventor · disambiguated record
Teemu Lang
Also filed as: LANG TEEMU
8 granted patents·6 pending applications·598 citations·filing 2003–2011
90Inventor score
Top patents by PatentIndex Score
14 records- 0197US7021330B2Diaphragm valve with reliability enhancements for atomic layer depositionPLANAR SYSTEMS INC·Filed 2003·Granted Apr 4, 2006·384 cites·66 claims
- 0295US7030430B2Transition metal alloys for use as a gate electrode and devices incorporating these alloysINTEL CORP·Filed 2003·Granted Apr 18, 2006·81 cites·8 claims
- 0392US7141095B2Precursor material delivery system for atomic layer depositionPLANAR SYSTEMS INC·Filed 2003·Granted Nov 28, 2006·40 cites·36 claims
- 0485US7193253B2Transition metal alloys for use as a gate electrode and devices incorporating these alloysINTEL CORP·Filed 2005·Granted Mar 20, 2007·9 cites·9 claims
- 0584US6941963B2High-speed diaphragm valve for atomic layer depositionPLANAR SYSTEMS INC·Filed 2003·Granted Sep 13, 2005·31 cites·38 claims
- 0684US6907897B2Diaphragm valve for high-temperature precursor supply in atomic layer depositionPLANAR SYSTEMS INC·Filed 2003·Granted Jun 21, 2005·30 cites·50 claims
- 0782US7191793B2Diaphragm valve for atomic layer depositionPLANAR SYSTEMS INC·Filed 2006·Granted Mar 20, 2007·10 cites·33 claims
- 0868US7198820B2Deposition of carbon- and transition metal-containing thin filmsPLANAR SYSTEMS INC·Filed 2003·Granted Apr 3, 2007·13 cites·60 claims
- 0956US2007089674A1Precursor material delivery system with thermal enhancements for atomic layer depositionPLANAR SYSTEMS INC·Filed 2006·Application pending·0 cites
- 1056US2007117383A1Precursor material delivery system with staging volume for atomic layer depositionPLANAR SYSTEMS INC·Filed 2006·Application pending·0 cites
- 1149US2007096163A1Transition metal alloys for use a gate electrode and device incorporating these alloysDOCZY MARK·Filed 2006·Application pending·0 cites
- 1247US2011097858A1Transition metal alloys for use as a gate electrode and devices incorporating these alloysDOCZY MARK·Filed 2010·Application pending·0 cites
- 1340US2012064700A1Semiconductor substrate, semiconductor device and method of manufacturing a semiconductor substrateODNOBLYUDOV MAXIM·Filed 2011·Application pending·0 cites
- 1440US2008308841A1Semiconductor Substrate, Semiconductor Device and Method of Manufacturing a Semiconductor SubstrateODNOBLYUDOV MAXIM·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →