Inventor · disambiguated record
Heedon Jeong
Also filed as: JEONG HEEDON
8 granted patents·1 pending application·78 citations·filing 2009–2018
86Inventor score
Top patents by PatentIndex Score
9 records- 0195US10128243B2Semiconductor device with fin field effect transistors having different separation regions between fins in NMOS and PMOS regionsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 13, 2018·32 cites·20 claims
- 0295US9117910B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 25, 2015·23 cites·17 claims
- 0387US9735059B2Method of fabricating semiconductor device including an etch barrier patternSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·4 cites·20 claims
- 0486US10128154B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·3 cites·19 claims
- 0586US8941155B2Fin field effect transistors including multiple lattice constants and methods of fabricating the sameKANG MYUNG GIL·Filed 2012·Granted Jan 27, 2015·14 cites·18 claims
- 0677US10847514B2Semiconductor device with fin field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
- 0762US10840142B2Semiconductor device including a three-dimensional channelSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·18 claims
- 0849US9252274B2Fin field effect transistors including multiple lattice constants and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·0 cites·4 claims
- 0942US2010164019A1Method of manufacturing nonvolatile memory deviceJEONG HEEDON·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →