Inventor · disambiguated record
Shyh-Chyi Wong
Also filed as: WONG SHYH-CHYI
63 granted patents·9 pending applications·1,517 citations·filing 1995–2020
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG36WINBOND ELECTRONICS CORP19RICHWAVE TECHNOLOGY CORP9HUANG CHIH-WEI2WINDBOND ELECTRONICS CORP2
Top patents by PatentIndex Score
72 records- 0195US6636139B2Structure to reduce the degradation of the Q value of an inductor caused by via resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 21, 2003·107 cites·22 claims
- 0293US7193475B2Single-ended input to differential output low noise amplifier with a cascode topologyRICHWAVE TECHNOLOGY CORP·Filed 2005·Granted Mar 20, 2007·35 cites·16 claims
- 0393US6436787B1Method of forming crown-type MIM capacitor integrated with the CU damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·75 cites·29 claims
- 0492US5959488ADual-node capacitor coupled MOSFET for improving ESD performanceWINBOND ELECTRONICS CORP·Filed 1998·Granted Sep 28, 1999·86 cites·34 claims
- 0590US7205844B2Low noise and high gain low noise amplifierRICHWAVE TECHNOLOGY CORP·Filed 2005·Granted Apr 17, 2007·23 cites·5 claims
- 0689US6054344AOTP (open trigger path) latchup scheme using buried-diode for sub-quarter micron transistorsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 25, 2000·80 cites·30 claims
- 0788US9052332B2Piezoresistive type Z-axis accelerometerHUANG CHIH-WEI·Filed 2012·Granted Jun 9, 2015·9 cites·15 claims
- 0888US6943063B2RF seal ring structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 13, 2005·42 cites·14 claims
- 0988US6444517B1High Q inductor with Cu damascene via/trench etching simultaneous moduleTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 3, 2002·58 cites·31 claims
- 1087US6359501B2Charge-pumping circuits for a low-supply voltageWINBOND ELECTRONICS CORP·Filed 2001·Granted Mar 19, 2002·74 cites·11 claims
- 1187US5573961AMethod of making a body contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Nov 12, 1996·66 cites·26 claims
- 1285US6426250B1High density stacked MIM capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 30, 2002·35 cites·17 claims
- 1384US6559493B2High density stacked mim capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 6, 2003·30 cites·7 claims
- 1484US6355962B1CMOS FET with P-well with P- type halo under drain and counterdoped N- halo under source regionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 12, 2002·30 cites·9 claims
- 1584US5818085ABody contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·53 cites·3 claims
- 1683US7692493B1High-efficiency single to differential amplifierRICHWAVE TECHNOLOGY CORP·Filed 2009·Granted Apr 6, 2010·13 cites·23 claims
- 1783US5870268AEarly trigger of ESD protection device by a current spike generatorWINBOND ELECTRONICS CORP·Filed 1997·Granted Feb 9, 1999·54 cites·34 claims
- 1882US6465294B1Self-aligned process for a stacked gate RF MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 15, 2002·31 cites·17 claims
- 1980US7358817B2Linearized bias circuit with adaptationRICHWAVE TECHNOLOGY CORP·Filed 2006·Granted Apr 15, 2008·13 cites·14 claims
- 2080US5460993AMethod of making NMOS and PMOS LDD transistors utilizing thinned sidewall spacersTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Oct 24, 1995·48 cites·24 claims
- 2179US8265171B2Error resilient video transmission using instantaneous receiver feedback and channel quality adaptive packet retransmissionSTEINBACH ECKEHARD GOETZ·Filed 2008·Granted Sep 11, 2012·7 cites·27 claims
- 2277US8026767B2Adaptive bias circuit and system thereofRICHWAVE TECHNOLOGY CORP·Filed 2009·Granted Sep 27, 2011·9 cites·25 claims
- 2376US6051458ADrain and source engineering for ESD-protection transistorsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 18, 2000·33 cites·9 claims
- 2475US6476451B2Buried guard rings for CMOS deviceWINBOND ELECTRONICS CORP·Filed 2001·Granted Nov 5, 2002·19 cites·9 claims
- 2574US6613623B1High fMAX deep submicron MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 2, 2003·18 cites·45 claims
- 2674US6246094B1Buried shallow trench isolation and method for forming the sameWINBOND ELECTRONICS CORP·Filed 1998·Granted Jun 12, 2001·34 cites·7 claims
- 2774US5852541AEarly trigger of ESD protection device by an oscillation circuitWINBOND ELECTRONICS CORP·Filed 1997·Granted Dec 22, 1998·36 cites·36 claims
- 2873US6501137B1Electrostatic discharge protection circuit triggered by PNP bipolar actionWINBOND ELECTRONICS CORP·Filed 2000·Granted Dec 31, 2002·17 cites·13 claims
- 2973US6258641B1OTP (open trigger path) latchup scheme using triple and buried well for sub-quarter micron transistorsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 10, 2001·33 cites·29 claims
- 3071US6404030B1Chain gate MOS structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 11, 2002·18 cites·22 claims
- 3171US6037622ACharge pump circuits for low supply voltagesWINBOND ELECTRONICS CORP·Filed 1999·Granted Mar 14, 2000·34 cites·21 claims
- 3269US6414361B2Buried shallow trench isolation and method for forming the sameWINBOND ELECTRONICS CORP·Filed 2001·Granted Jul 2, 2002·12 cites·6 claims
- 3368US7693503B2Mixer having filtering module to filter out low-frequency components to minimize noiseRICHWAVE TECHNOLOGY CORP·Filed 2007·Granted Apr 6, 2010·4 cites·13 claims
- 3468USRE38319EDual-node capacitor coupled MOSFET for improving ESD performanceWINBOND ELECTRONICS CORP·Filed 2001·Granted Nov 18, 2003·16 cites·57 claims
- 3565US6737310B2Self-aligned process for a stacked gate RF MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 18, 2004·11 cites·14 claims
- 3664US6083797ABuried shallow trench isolation and method for forming the sameWINBOND ELECTRONICS CORP·Filed 1999·Granted Jul 4, 2000·22 cites·13 claims
- 3763US10992268B2Radio frequency amplification device capable of detecting the frequency bandRICHWAVE TECHNOLOGY CORP·Filed 2019·Granted Apr 27, 2021·1 cites·23 claims
- 3863US6845347B1Method for modeling an integrated circuit including a DRAM cellWINBOND ELECTRONICS CORP·Filed 2000·Granted Jan 18, 2005·9 cites·36 claims
- 3962US6348714B1Soi structure with a body contactWINDBOND ELECTRONICS CORP·Filed 2000·Granted Feb 19, 2002·11 cites·6 claims
- 4062US5644269ACascode MOS current mirror with lateral bipolar junction transistor to enhance ouput signal swingTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jul 1, 1997·21 cites·19 claims
- 4161US8904868B2Sensing apparatusHUANG CHIH-WEI·Filed 2012·Granted Dec 9, 2014·1 cites·9 claims
- 4261US7437131B2Active mixer with self-adaptive bias feedbackRICHWAVE TECHNOLOGY CORP·Filed 2005·Granted Oct 14, 2008·3 cites·17 claims
- 4361US6732422B1Method of forming resistorsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 11, 2004·8 cites·16 claims
- 4460US6124618ADynamic threshold MOSFET using accumulated base BJT level shifter for low voltage sub-quarter micron transistorTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 26, 2000·16 cites·9 claims
- 4559US5614424AMethod for fabricating an accumulated-base bipolar junction transistorTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 25, 1997·21 cites·4 claims
- 4658US5705839AGate spacer to control the base width of a lateral bipolar junction transistor using SOI technologyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 6, 1998·20 cites·2 claims
- 4754US5952698ALayout pattern for improved MOS device matchingTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Sep 14, 1999·13 cites·22 claims
- 4854US5567631AMethod of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technologyTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Oct 22, 1996·17 cites·18 claims
- 4952US7061056B2High fMAX deep submicron MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 13, 2006·4 cites·50 claims
- 5052US6469362B2High-gain pnp bipolar junction transistor in a CMOS device and method for forming the sameWINBOND ELECTRONICS CORP·Filed 2000·Granted Oct 22, 2002·4 cites·15 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Shyh-Chyi Wong files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →