Inventor · disambiguated record

Shang-Wen Chang

Also filed as: CHANG SHANG · CHANG SHANG C · CHANG SHANG-WEN

74 granted patents·35 pending applications·239 citations·filing 1991–2025

98Inventor score

Technology areasH10W H10P H10D G11C H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD88 APPA TECHNOLOGY CORP4 WINBOND ELECTRONICS CORP3 APPA TECH CORP2 APPA TECH CORPORATION2

Top patents by PatentIndex Score

109 records

0199US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
0298US11342326B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
0398US11121138B1Low resistance pickup cells for SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·9 cites·20 claims
0497US11862561B2Semiconductor devices with backside routing and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 2, 2024·4 cites·20 claims
0597US11764154B2Power rail and signal line arrangement in integrated circuits having stacked transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·3 cites·20 claims
0697US11735482B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·2 cites·20 claims
0796US12080713B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·2 cites·20 claims
0896US11764203B2Integrated hybrid standard cell structure with gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
0995US11682590B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
1094US11532556B2Structure and method for transistors having backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
1193US11075195B2Integrated hybrid standard cell structure with gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·5 cites·20 claims
1293US10672665B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·6 cites·20 claims
1392US11355398B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
1491US11810917B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·1 cites·20 claims
1591US11393815B2Transistors with varying width nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 19, 2022·5 cites·20 claims
1689US11127631B2Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 21, 2021·4 cites·20 claims
1788US2025316584A1Interconnect structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1887US7420227B2Cu-metalized compound semiconductor deviceUNIV NAT CHIAO TUNG·Filed 2005·Granted Sep 2, 2008·17 cites·9 claims
1987US2025359335A1Semiconductor device having segmented interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2087US2025324762A1Method of making amphi-fet structure and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2186US12453114B2Semiconductor transistor devices having double-sided interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
2286US12408440B2Method of making amphi-FET structure and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
2385US2024379654A1Integrated Hybrid Standard Cell Structure with Gate-All-Around DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2485US2025081594A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2585US2025293089A1Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2684US12148745B2Integrated hybrid standard cell structure with gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
2784US12113066B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
2884US2025062195A1Semiconductor device having self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2983US12471377B2Method of forming semiconductor device having segmented interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
3083US12266594B2Method of making semiconductor device having self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
3183US11404320B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·1 cites·20 claims
3283US2024395671A1Mehtod of making semiconductor device having self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3383US2025324558A1Finfet sram cells with reduced fin pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3483US2024387530A1Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3582US12484254B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
3682US12327765B2Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
3782US12165926B2FinFET device structure having dielectric features between a plurality of gate electrodes and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
3882US12107012B2Method for forming fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
3982US12009362B2Method of making amphi-FET structure and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
4082US2025359153A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4182US2025241052A1Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4282US2025364330A1Device with through via and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4381US12272605B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
4480USD419464SPortable electrical multimeterAPPA TECH CORP·Filed 1999·Granted Jan 25, 2000·24 cites·1 claims
4579US11791215B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
4679US7010716B2Method and apparatus for defining failover events in a network deviceNORTEL NETWORKS LTD·Filed 2002·Granted Mar 7, 2006·30 cites·18 claims
4779US2025329652A1Backside power scheme with front-side power inputTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4878US12033935B2Semiconductor device including recessed interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
4978US11784233B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
5078US2025336797A1Packages with power switches and power user circuits separated in different diesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 109 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →