Inventor · disambiguated record
Ming-Kwei Lee
Also filed as: LEE MING-KWEI
24 granted patents·2 pending applications·231 citations·filing 1992–2007
95Inventor score
Files withNAT SCIENCE COUNCIL12WINBOND ELECTRONICS CORP5UNIV NAT SUN YAT SEN3LEE MING-KWEI2CHIA TA WORLD CO LTD1
Top patents by PatentIndex Score
26 records- 0191US7771688B2Method for preparing titanium dioxide particles co-doped with nitrogen and fluorineUNIV NAT SUN YAT SEN·Filed 2007·Granted Aug 10, 2010·13 cites·12 claims
- 0288US5705047AMethod for manufacturing porous blue light emitting diodeNAT SCIENCE COUNCIL·Filed 1996·Granted Jan 6, 1998·113 cites·14 claims
- 0379US7341960B2Method for making a metal oxide semiconductor deviceUNIV NAT SUN YAT SEN·Filed 2005·Granted Mar 11, 2008·13 cites·8 claims
- 0465US6858873B2Semiconductor diode having a semiconductor die with a substrate and multiple films applied thereoverCHIA TA WORLD CO LTD·Filed 2002·Granted Feb 22, 2005·18 cites·17 claims
- 0560US7371668B2Method for making a metal oxide semiconductor deviceUNIV NAT SUN YAT SEN·Filed 2005·Granted May 13, 2008·1 cites·11 claims
- 0659US6197110B1Mass production of silicon dioxide film by liquid phase deposition methodNAT SCIENCE COUNCIL·Filed 1999·Granted Mar 6, 2001·14 cites·20 claims
- 0750US6482751B2Titanium dioxide layer serving as a mask and its removed methodWINBOND ELECTRONICS CORP·Filed 2001·Granted Nov 19, 2002·3 cites·17 claims
- 0848US6461952B2Method for growing barium titanate thin filmNAT SCIENCE COUNCIL·Filed 2000·Granted Oct 8, 2002·2 cites·18 claims
- 0939US6660615B1Method and apparatus for growing layer on one surface of waferWINDBOND ELECTRONICS CORP·Filed 2001·Granted Dec 9, 2003·0 cites·12 claims
- 1038US6103546AMethod to improve the short circuit current of the porous silicon photodetectorNAT SCIENCE COUNCIL·Filed 1998·Granted Aug 15, 2000·7 cites·4 claims
- 1137US6090726APretreatment method of a silicon wafer using nitric acidNAT SCIENCE COUNCIL·Filed 1998·Granted Jul 18, 2000·6 cites·6 claims
- 1236US6153539ALiquid phase deposition method for growing a titanium dioxide on a gallium arsenide substrateNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1999·Granted Nov 28, 2000·5 cites·8 claims
- 1336US5665423AMethod for manufacturing a photodetector for sensing light having a wavelength within a wide rangeNAT SCIENCE COUNCIL·Filed 1995·Granted Sep 9, 1997·6 cites·22 claims
- 1436US2007099003A1Titanate-containing material and method for making the sameLEE MING-KWEI·Filed 2006·Application pending·0 cites
- 1535US5478757AMethod for manufacturing photodetector using a porous layerNAT SCIENCE COUNCIL·Filed 1994·Granted Dec 26, 1995·5 cites·24 claims
- 1634US6238965B1Method for forming a titanium dioxide layerWINBOND ELECTRONICS CORP·Filed 1999·Granted May 29, 2001·3 cites·20 claims
- 1733US6455344B1Method of fabricating a planar porous silicon metal-semicoductor-metal photodetectorNAT SCIENCE COUNCIL·Filed 1999·Granted Sep 24, 2002·4 cites·4 claims
- 1833US5766692AProcess for depositing oxynitride film on substrate by liquid phase depositionNAT SCIENCE COUNCIL·Filed 1997·Granted Jun 16, 1998·5 cites·11 claims
- 1932US5965005AMask for porous silicon formationNAT SCIENCE COUNCIL·Filed 1997·Granted Oct 12, 1999·3 cites·16 claims
- 2030US6524970B1Method for growing a barium titanate layerWINBOND ELECTRONICS CORP·Filed 1999·Granted Feb 25, 2003·1 cites·13 claims
- 2130US6251803B1Method for forming a titanium dioxide layerWINBOND ELECTRONICS CORP·Filed 1999·Granted Jun 26, 2001·1 cites·20 claims
- 2230US6235116B1Method and apparatus for growing layer on one surface of waferWINBOND ELECTRONICS CORP·Filed 1999·Granted May 22, 2001·1 cites·13 claims
- 2330US5753311AMethod for forming oxide layerNAT SCIENCE COUNCIL·Filed 1996·Granted May 19, 1998·1 cites·14 claims
- 2428US2007102732A1Metal oxide semiconductor deviceLEE MING-KWEI·Filed 2005·Application pending·0 cites
- 2526US5776793AMethod of fabricating opto-electronic deviceNAT SCIENCE COUNCIL·Filed 1996·Granted Jul 7, 1998·4 cites·14 claims
- 2619US5373167AOpto-electronic deviceNAT SCIENCE COUNSEL·Filed 1992·Granted Dec 13, 1994·2 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →