Inventor · disambiguated record
Bernard M. Kemlage
Also filed as: KEMLAGE BERNARD M
11 granted patents·564 citations·filing 1974–1985
93Inventor score
Files withIBM11
Top patents by PatentIndex Score
11 records- 0195US4454647AIsolation for high density integrated circuitsIBM·Filed 1981·Granted Jun 19, 1984·121 cites·11 claims
- 0292US4239811ALow pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reactionIBM·Filed 1979·Granted Dec 16, 1980·55 cites·10 claims
- 0389US4254161APrevention of low pressure chemical vapor deposition silicon dioxide undercutting and flakingIBM·Filed 1979·Granted Mar 3, 1981·43 cites·10 claims
- 0485US4508757AMethod of manufacturing a minimum bird's beak recessed oxide isolation structureIBM·Filed 1982·Granted Apr 2, 1985·81 cites·9 claims
- 0585US4385975AMethod of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrateIBM·Filed 1981·Granted May 31, 1983·60 cites·17 claims
- 0680US3963538ATwo stage heteroepitaxial deposition process for GaP/SiIBM·Filed 1974·Granted Jun 15, 1976·30 cites·16 claims
- 0777US4688069AIsolation for high density integrated circuitsIBM·Filed 1985·Granted Aug 18, 1987·53 cites·7 claims
- 0876US3963539ATwo stage heteroepitaxial deposition process for GaAsP/Si LED'sIBM·Filed 1974·Granted Jun 15, 1976·23 cites·6 claims
- 0971US4431460AMethod of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layerIBM·Filed 1982·Granted Feb 14, 1984·41 cites·20 claims
- 1070US4454646AIsolation for high density integrated circuitsIBM·Filed 1981·Granted Jun 19, 1984·33 cites·10 claims
- 1161US4437897AFabrication process for a shallow emitter/base transistor using same polycrystalline layerIBM·Filed 1982·Granted Mar 20, 1984·24 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Bernard M. Kemlage files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →