Inventor · disambiguated record
Runling Li
Also filed as: LI RUNLING
10 granted patents·1 pending application·4 citations·filing 2007–2022
78Inventor score
Files withSHANGHAI HUALI INTEGRATED CIRCUIT CORP5SHANGHAI HUALI MICROELECT CORP4SEMICONDUCTOR MFG INT SHANGHAI1SHANGHAI HUALI INTEGRATED CIRCUIT MFG CO LTD1
Top patents by PatentIndex Score
11 records- 0175US10332979B2Methods and systems for reducing dislocation defects in high concentration epitaxy processesSHANGHAI HUALI MICROELECT CORP·Filed 2015·Granted Jun 25, 2019·2 cites·7 claims
- 0265US11855212B2FDSOI device structure and preparation method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Dec 26, 2023·0 cites·9 claims
- 0363US9171731B2Method of forming the gate with the LELE double patternSHANGHAI HUALI MICROELECT CORP·Filed 2013·Granted Oct 27, 2015·2 cites·7 claims
- 0461US11569385B2FDSOI device structure and preparation method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Jan 31, 2023·0 cites·10 claims
- 0554US10868144B2Methods and systems for reducing dislocation defects in high concentration epitaxy processesSHANGHAI HUALI MICROELECT CORP·Filed 2019·Granted Dec 15, 2020·0 cites·10 claims
- 0650US11335605B2Strained semiconductor device with improved NBTI and a method of making the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted May 17, 2022·0 cites·7 claims
- 0744US11302780B1FDSOI device structure and preparation method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Apr 12, 2022·0 cites·15 claims
- 0844US7838411B2Fluxless reflow process for bump formationSEMICONDUCTOR MFG INT SHANGHAI·Filed 2007·Granted Nov 23, 2010·0 cites·30 claims
- 0943US10886216B2Electric fuse structure for optimizing programming current window of the electric fuse structure and manufacturing methodSHANGHAI HUALI INTEGRATED CIRCUIT MFG CO LTD·Filed 2018·Granted Jan 5, 2021·0 cites·18 claims
- 1042US11398410B2Method for manufacturing a CMOS deviceSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Jul 26, 2022·0 cites·6 claims
- 1130US2016322476A1Method of manufacturing a fin field effect transistorSHANGHAI HUALI MICROELECT CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →