Inventor · disambiguated record
G. David Via
Also filed as: VIA G DAVID
12 granted patents·363 citations·filing 1996–2002
93Inventor score
Top patents by PatentIndex Score
12 records- 0182US6222210B1Complementary heterostructure integrated single metal transistor apparatusUS AIR FORCE·Filed 1998·Granted Apr 24, 2001·58 cites·30 claims
- 0282US5698900AField effect transistor device with single layer integrated metal and retained semiconductor maskingUS ARMY·Filed 1996·Granted Dec 16, 1997·59 cites·22 claims
- 0378US5869364ASingle layer integrated metal process for metal semiconductor field effect transistor (MESFET)US AIR FORCE·Filed 1996·Granted Feb 9, 1999·46 cites·20 claims
- 0478US5698870AHigh electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metalUS ARMY·Filed 1996·Granted Dec 16, 1997·47 cites·25 claims
- 0571US6004881ADigital wet etching of semiconductor materialsUS AIR FORCE·Filed 1997·Granted Dec 21, 1999·43 cites·20 claims
- 0666US5976920ASingle layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)US AIR FORCE·Filed 1996·Granted Nov 2, 1999·28 cites·23 claims
- 0761US6198116B1Complementary heterostructure integrated single metal transistor fabrication methodUS AIR FORCE·Filed 1998·Granted Mar 6, 2001·22 cites·24 claims
- 0858US6020226ASingle layer integrated metal process for enhancement mode field-effect transistorUS AIR FORCE·Filed 1998·Granted Feb 1, 2000·19 cites·25 claims
- 0953US5940694AField effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stopsFiled 1996·Granted Aug 17, 1999·21 cites·20 claims
- 1048US6653214B1Measured via-hole etchingUS AIR FORCE·Filed 2002·Granted Nov 25, 2003·3 cites·22 claims
- 1145US6066865ASingle layer integrated metal enhancement mode field-effect transistor apparatusUS AIR FORCE·Filed 1998·Granted May 23, 2000·10 cites·25 claims
- 1240US5796131AMetal semiconductor field effect transistor (MESFET) device with single layer integrated metalUS ARMY·Filed 1996·Granted Aug 18, 1998·7 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →