Inventor · disambiguated record
Gregory C. Desalvo
Also filed as: DESALVO GREGORY · DESALVO GREGORY C
14 granted patents·2 pending applications·525 citations·filing 1996–2006
94Inventor score
Top patents by PatentIndex Score
16 records- 0194US6657525B1Microelectromechanical RF switchNORTHROP GRUMMAN CORP·Filed 2002·Granted Dec 2, 2003·120 cites·16 claims
- 0285US6884717B1Stiffened backside fabrication for microwave radio frequency wafersUS AIR FORCE·Filed 2002·Granted Apr 26, 2005·42 cites·24 claims
- 0382US6222210B1Complementary heterostructure integrated single metal transistor apparatusUS AIR FORCE·Filed 1998·Granted Apr 24, 2001·58 cites·30 claims
- 0482US5698900AField effect transistor device with single layer integrated metal and retained semiconductor maskingUS ARMY·Filed 1996·Granted Dec 16, 1997·59 cites·22 claims
- 0578US5869364ASingle layer integrated metal process for metal semiconductor field effect transistor (MESFET)US AIR FORCE·Filed 1996·Granted Feb 9, 1999·46 cites·20 claims
- 0678US5698870AHigh electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metalUS ARMY·Filed 1996·Granted Dec 16, 1997·47 cites·25 claims
- 0771US6004881ADigital wet etching of semiconductor materialsUS AIR FORCE·Filed 1997·Granted Dec 21, 1999·43 cites·20 claims
- 0866US5976920ASingle layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)US AIR FORCE·Filed 1996·Granted Nov 2, 1999·28 cites·23 claims
- 0961US6198116B1Complementary heterostructure integrated single metal transistor fabrication methodUS AIR FORCE·Filed 1998·Granted Mar 6, 2001·22 cites·24 claims
- 1058US6020226ASingle layer integrated metal process for enhancement mode field-effect transistorUS AIR FORCE·Filed 1998·Granted Feb 1, 2000·19 cites·25 claims
- 1153US5940694AField effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stopsFiled 1996·Granted Aug 17, 1999·21 cites·20 claims
- 1248US6653214B1Measured via-hole etchingUS AIR FORCE·Filed 2002·Granted Nov 25, 2003·3 cites·22 claims
- 1345US6066865ASingle layer integrated metal enhancement mode field-effect transistor apparatusUS AIR FORCE·Filed 1998·Granted May 23, 2000·10 cites·25 claims
- 1440US5796131AMetal semiconductor field effect transistor (MESFET) device with single layer integrated metalUS ARMY·Filed 1996·Granted Aug 18, 1998·7 cites·22 claims
- 1538US2006138604A1Low charging dielectric for capacitive MEMS devices and method of making sameNORTHROP GRUMMAN CORP·Filed 2004·Application pending·0 cites
- 1633US2007121274A1Small volume thin film and high energy density crystal capacitorsTALVACCHIO JOHN J·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →