Inventor · disambiguated record
Byoungkeun Son
Also filed as: SON BYOUNGKEUN
47 granted patents·1 pending application·391 citations·filing 2010–2022
98Inventor score
Top patents by PatentIndex Score
48 records- 0197US8569827B2Three-dimensional semiconductor memory devicesLEE CHANGHYUN·Filed 2011·Granted Oct 29, 2013·33 cites·14 claims
- 0297US8559224B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2011·Granted Oct 15, 2013·36 cites·39 claims
- 0397US8383482B2Three-dimensional semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 26, 2013·39 cites·17 claims
- 0496US8284601B2Semiconductor memory device comprising three-dimensional memory cell arraySON BYOUNGKEUN·Filed 2010·Granted Oct 9, 2012·40 cites·45 claims
- 0595US10600801B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·8 cites·14 claims
- 0695US8338244B2Methods of fabricating three-dimensional nonvolatile memory devices using expansionsSON BYOUNGKEUN·Filed 2010·Granted Dec 25, 2012·17 cites·15 claims
- 0794US9947686B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSON BYOUNGKEUN·Filed 2017·Granted Apr 17, 2018·9 cites·20 claims
- 0894US8581321B2Nonvolatile memory device and method of forming the sameSON BYOUNGKEUN·Filed 2011·Granted Nov 12, 2013·20 cites·13 claims
- 0993US8872183B2Three-dimensional semiconductor devicesCHANG SUNG-IL·Filed 2012·Granted Oct 28, 2014·14 cites·20 claims
- 1093US8787082B2Semiconductor memory device comprising three-dimensional memory cell arraySON BYOUNGKEUN·Filed 2012·Granted Jul 22, 2014·19 cites·9 claims
- 1193US8625348B2Nonvolatile memory devices and methods forming the sameLEE CHANGHYUN·Filed 2011·Granted Jan 7, 2014·12 cites·12 claims
- 1293US7972955B2Three dimensional semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 5, 2011·17 cites·15 claims
- 1392US10038007B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
- 1492US9627396B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSON BYOUNGKEUN·Filed 2015·Granted Apr 18, 2017·7 cites·19 claims
- 1592US8891315B2Nonvolatile memory device and erase method thereofLEE CHANGHYUN·Filed 2013·Granted Nov 18, 2014·16 cites·20 claims
- 1691US9754957B2Nonvolatile memory devices and methods forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 5, 2017·6 cites·4 claims
- 1791US8981458B2Three-dimensional semiconductor devices and methods of fabricating the sameLEE CHANGHYUN·Filed 2011·Granted Mar 17, 2015·9 cites·22 claims
- 1891US8923053B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2013·Granted Dec 30, 2014·12 cites·21 claims
- 1989US9111799B2Semiconductor device with a pick-up regionHWANG SUNG-MIN·Filed 2011·Granted Aug 18, 2015·11 cites·20 claims
- 2089US9105736B2Three-dimensional nonvolatile memory devices including interposed floating gatesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 11, 2015·6 cites·10 claims
- 2188US8728893B2Method of fabricating a three-dimentional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 20, 2014·8 cites·13 claims
- 2287US10411031B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 10, 2019·3 cites·20 claims
- 2387US9177965B2Nonvolatile memory device in three-dimensional structure with a stress reducing materials on the channelLEE CHANGHYUN·Filed 2011·Granted Nov 3, 2015·12 cites·10 claims
- 2486US8674414B2Three-dimensional nonvolatile memory devices including interposed floating gatesSAMSUNG ELECTRONICS COL LTD·Filed 2012·Granted Mar 18, 2014·5 cites·5 claims
- 2583US9905574B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 27, 2018·2 cites·11 claims
- 2682US9793292B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 17, 2017·2 cites·13 claims
- 2781US8643080B2Three-dimensional semiconductor memory deviceLEE CHANGHYUN·Filed 2011·Granted Feb 4, 2014·6 cites·19 claims
- 2878US9093479B2Method of forming nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 28, 2015·4 cites·9 claims
- 2977US10586808B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 10, 2020·1 cites·20 claims
- 3077US8829589B2Three-dimensional semiconductor memory deviceLEE CHANGHYUN·Filed 2013·Granted Sep 9, 2014·4 cites·21 claims
- 3176USRE50089EThree dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·40 claims
- 3272US11107833B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·17 claims
- 3372US10978479B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
- 3472US9356159B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 31, 2016·1 cites·20 claims
- 3571US10748929B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 18, 2020·0 cites·20 claims
- 3671US9190533B2Three-dimensional nonvolatile memory devices including interposed floating gatesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 17, 2015·1 cites·17 claims
- 3771US8614511B2Three dimensional semiconductor memory device and method of fabricating the sameCHOI SUKHUN·Filed 2011·Granted Dec 24, 2013·3 cites·5 claims
- 3870US11121154B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 3969US9240419B2Three-dimensional semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 19, 2016·1 cites·5 claims
- 4067US9047952B2Nonvolatile memory devices and methods forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 2, 2015·1 cites·47 claims
- 4162US10559590B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·0 cites·14 claims
- 4259US10483278B2Nonvolatile memory devices and methods forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 19, 2019·0 cites·13 claims
- 4359US10037888B2Three-dimensional nonvolatile memory devices including interposed floating gatesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 31, 2018·0 cites·19 claims
- 4457US9337351B2Three-dimensional nonvolatile memory devices including interposed floating gatesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 10, 2016·0 cites·19 claims
- 4557US9136395B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 15, 2015·0 cites·15 claims
- 4656US9536895B2Methods of fabricating three-dimensional semiconductor devicesLEE CHANGHYUN·Filed 2015·Granted Jan 3, 2017·0 cites·18 claims
- 4748US9490130B2Method of manufacturing three-dimensional semiconductor memory device in which an oxide layer is formed at bottom of vertical structure of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 8, 2016·0 cites·14 claims
- 4836US2010207184A1Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →