Inventor · disambiguated record

James Mac Freitag

Also filed as: FREITAG JAMES · FREITAG JAMES M · FREITAG JAMES MAC

108 granted patents·23 pending applications·866 citations·filing 2001–2024

99Inventor score

Technology areasG11B G01R B82Y H01F H10F

Files withHITACHI GLOBAL STORAGE TECH50 WESTERN DIGITAL TECH INC40 HGST Netherlands BV13 IBM5 FREITAG JAMES M4

Top patents by PatentIndex Score

131 records

0199US11283006B1Methods and apparatus of high moment free layers for magnetic tunnel junctionsWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 22, 2022·6 cites·29 claims
0299US10950260B1Magnetoresistive sensor with improved magnetic properties and magnetostriction controlWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 16, 2021·7 cites·20 claims
0399US10839833B1Spin transfer torque device with oxide layer beneath the seed layerWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 17, 2020·7 cites·20 claims
0498US10943611B1Spintronic devices with narrow spin polarization layersWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 9, 2021·14 cites·16 claims
0598US10867625B1Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layersWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 15, 2020·16 cites·23 claims
0697US11289118B1Spintronic device having negative interface spin scatteringWESTERN DIGITAL TECH INC·Filed 2021·Granted Mar 29, 2022·11 cites·20 claims
0797US11127420B1Seed layer for spin torque oscillator in microwave assisted magnetic recording deviceWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 21, 2021·8 cites·12 claims
0896US12040114B2Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) textureWESTERN DIGITAL TECH INC·Filed 2022·Granted Jul 16, 2024·2 cites·39 claims
0996US10762917B1Reversed mode spin torque oscillator with shaped field generation layerWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 1, 2020·20 cites·12 claims
1096US7580230B2Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edgesHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Aug 25, 2009·25 cites·5 claims
1196US7522391B2Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structureHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Apr 21, 2009·32 cites·21 claims
1296US7369371B2Magnetoresistive sensor having a shape enhanced pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 6, 2008·28 cites·21 claims
1395US11257514B2Magnetic recording devices having negative polarization layer to enhance spin-transfer torqueWESTERN DIGITAL TECH INC·Filed 2020·Granted Feb 22, 2022·5 cites·21 claims
1495US10997993B1Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write headWESTERN DIGITAL TECH INC·Filed 2020·Granted May 4, 2021·5 cites·10 claims
1595US10950258B1Spin torque oscillator having one or more chromium insertion layers for magnetic recording drivesWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 16, 2021·6 cites·21 claims
1695US9099124B1Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusionHGST Netherlands BV·Filed 2014·Granted Aug 4, 2015·30 cites·17 claims
1795US7848065B2Magnetoresistive sensor having an anisotropic hard bias with high coercivityHITACHI GLOBAL STORAGE TECH NL·Filed 2006·Granted Dec 7, 2010·23 cites·10 claims
1895US7466524B2Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flipHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Dec 16, 2008·20 cites·8 claims
1993US10643643B1Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layerWESTERN DIGITAL TECH INC·Filed 2019·Granted May 5, 2020·12 cites·20 claims
2093US6785102B2Spin valve sensor with dual self-pinned AP pinned layer structuresHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Aug 31, 2004·41 cites·8 claims
2193US6636400B2Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layerIBM·Filed 2001·Granted Oct 21, 2003·39 cites·20 claims
2292US9734850B1Magnetic tunnel junction (MTJ) free layer damping reductionHGST Netherlands BV·Filed 2016·Granted Aug 15, 2017·9 cites·27 claims
2392US9001473B1TMR/CPP reader for narrow reader gap applicationHGST Netherlands BV·Filed 2014·Granted Apr 7, 2015·17 cites·20 claims
2492US6624985B1Pinning layer seeds for CPP geometry spin valve sensorsIBM·Filed 2002·Granted Sep 23, 2003·37 cites·24 claims
2591US8266785B2Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stabilityFREITAG JAMES MAC·Filed 2007·Granted Sep 18, 2012·14 cites·9 claims
2691US7602589B2Magnetoresistive sensor having shape enhanced pinning and low lead resistanceHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 13, 2009·20 cites·14 claims
2789US9570100B1Two-dimensional magnetic recording device with center shield stabilized by recessed AFM layerHGST Netherlands BV·Filed 2015·Granted Feb 14, 2017·10 cites·21 claims
2889US9030785B2Narrow read-gap head with recessed afmHGST Netherlands BV·Filed 2013·Granted May 12, 2015·11 cites·28 claims
2989US8958180B1Capping materials for magnetic read head sensorHGST Netherlands BV·Filed 2013·Granted Feb 17, 2015·10 cites·18 claims
3089US7663846B2Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinningHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Feb 16, 2010·17 cites·34 claims
3189US7564659B2Magnetoresistive sensor having an anisotropic pinned layer for pinning improvementHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jul 21, 2009·16 cites·18 claims
3289US7420787B2Magnetoresistive sensor having a shape enhanced pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Sep 2, 2008·17 cites·8 claims
3387US7502209B2Read sensors having nitrogenated hard bias layers and method of making the sameHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Mar 10, 2009·7 cites·12 claims
3486US6751072B2High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structureHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jun 15, 2004·18 cites·13 claims
3586US6744607B2Exchange biased self-pinned spin valve sensor with recessed overlaid leadsHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jun 1, 2004·21 cites·18 claims
3685US10566015B2Spin transfer torque (STT) device with template layer for heusler alloy magnetic layersWESTERN DIGITAL TECH INC·Filed 2018·Granted Feb 18, 2020·8 cites·20 claims
3785US7652855B2Magnetic sensor with extended free layer and overlaid leadsHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jan 26, 2010·6 cites·17 claims
3885US7616409B2Magnetic sensor having a Ru/Si based seedlayer providing improved free layer biasingHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Nov 10, 2009·6 cites·4 claims
3984US11211083B1MAMR head with synthetic antiferromagnetic (SAF) coupled notchWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 28, 2021·2 cites·21 claims
4084US9318133B2Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning fieldHGST Netherlands BV·Filed 2013·Granted Apr 19, 2016·7 cites·17 claims
4184US7280314B2Lower saturation field structure for perpendicular AFC poleHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Oct 9, 2007·17 cites·22 claims
4283US7177120B2Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Feb 13, 2007·16 cites·23 claims
4383US7082017B2High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structureHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Jul 25, 2006·14 cites·10 claims
4482US10460752B2Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write headWESTERN DIGITAL TECH INC·Filed 2018·Granted Oct 29, 2019·5 cites·27 claims
4582US7900342B2Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropyHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Mar 8, 2011·7 cites·16 claims
4682US7440243B2Read sensors of the CPP type having nitrogenated hard bias layers and method of making the sameHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Oct 21, 2008·4 cites·12 claims
4782US7436629B2Laminated magnetic structure for use in a perpendicular magnetic write headHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Oct 14, 2008·4 cites·20 claims
4882US7433163B2Seedlayer for high hard bias layer coercivityHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 7, 2008·4 cites·22 claims
4981US11881236B2Spin torque oscillator with enhanced spin polarizerWESTERN DIGITAL TECH INC·Filed 2022·Granted Jan 23, 2024·1 cites·22 claims
5080US7505235B2Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory deviceHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Mar 17, 2009·6 cites·21 claims

Showing the top 50 of 131 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when James Mac Freitag files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →