Inventor · disambiguated record
Yasuki Yoshihisa
Also filed as: YOSHIHISA YASUKI
12 granted patents·3 pending applications·31 citations·filing 1994–2015
87Inventor score
Top patents by PatentIndex Score
15 records- 0169US8344458B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2011·Granted Jan 1, 2013·3 cites·10 claims
- 0268US9099548B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 4, 2015·2 cites·6 claims
- 0357US6440787B1Manufacturing method of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 27, 2002·9 cites·14 claims
- 0453US8704330B2Semiconductor deviceYOSHIHISA YASUKI·Filed 2011·Granted Apr 22, 2014·1 cites·16 claims
- 0547US6562704B2Method for manufacturing semiconductor device, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted May 13, 2003·2 cites·1 claims
- 0646US2015303096A1Method of manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 0744US6984868B2Semiconductor device having a structure for isolating elementsRENESAS TECH CORP·Filed 2001·Granted Jan 10, 2006·2 cites·3 claims
- 0842US9608108B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Mar 28, 2017·0 cites·18 claims
- 0940US2007166969A1Semiconductor device and method for manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 1036US9490246B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 8, 2016·0 cites·12 claims
- 1135US5693543AMethod of manufacturing a semiconductor IIL device with dielectric and diffusion isolationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 2, 1997·4 cites·4 claims
- 1234US6051873ASemiconductor device including self-aligned base and emitter electrodesMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 18, 2000·4 cites·6 claims
- 1332US5893759ASemiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 13, 1999·3 cites·16 claims
- 1432US2004140527A1Semiconductor device having poly-poly capacitorRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 1529US5481130ASemiconductor IIL device with dielectric and diffusion isolationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 2, 1996·1 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →