Inventor · disambiguated record
Kazunori Onozawa
Also filed as: ONOZAWA KAZUNORI
9 granted patents·94 citations·filing 1986–1997
87Inventor score
Top patents by PatentIndex Score
9 records- 0173US5290714AMethod of forming semiconductor device including a CMOS structure having double-doped channel regionsHITACHI LTD·Filed 1992·Granted Mar 1, 1994·40 cites·23 claims
- 0267US4672416ASemiconductor deviceHITACHI LTD·Filed 1986·Granted Jun 9, 1987·20 cites·6 claims
- 0351US5903036ASemiconductor device having MISFET SRAM cells in which active regions and gate electrodes are dimensioned for increasing storage node capacitances without increasing memory cell sizeHITACHI LTD·Filed 1997·Granted May 11, 1999·15 cites·18 claims
- 0448US4868626ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Sep 19, 1989·9 cites·10 claims
- 0535US5847434ASemiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 1996·Granted Dec 8, 1998·5 cites·21 claims
- 0630US5722285ACaliper sensorYOKOGAWA ELECTRIC CORP·Filed 1996·Granted Mar 3, 1998·2 cites·7 claims
- 0730US5392250ASemiconductor memory deviceHITACHI LTD·Filed 1993·Granted Feb 21, 1995·0 cites·24 claims
- 0829US4990461AMethod of making a semiconductor integrated circuit device having resistance elementsHITACHI LTD·Filed 1989·Granted Feb 5, 1991·2 cites·6 claims
- 0928US5029323ASemiconductor deviceHITACHI LTD·Filed 1989·Granted Jul 2, 1991·1 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →