Inventor · disambiguated record
Kwan-Jong Roh
Also filed as: ROH KWAN-JONG
10 granted patents·4 pending applications·77 citations·filing 2003–2009
87Inventor score
Top patents by PatentIndex Score
14 records- 0186US7084061B2Methods of fabricating a semiconductor device having MOS transistor with strained channelSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·36 cites·27 claims
- 0274US7557415B2Trench isolation type semiconductor device and related method of manufactureSAMSUNG ELECTRONCIS CO LTD·Filed 2007·Granted Jul 7, 2009·7 cites·8 claims
- 0374US7375025B2Method for forming a metal silicide layer in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·4 cites·9 claims
- 0472US7781322B2Nickel alloy salicide transistor structure and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 24, 2010·14 cites·34 claims
- 0561US7232756B2Nickel salicide process with reduced dopant deactivationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·9 cites·38 claims
- 0660US7932149B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 26, 2011·2 cites·20 claims
- 0746US8008177B2Method for fabricating semiconductor device using a nickel salicide processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 30, 2011·4 cites·20 claims
- 0846US7709340B2Semiconductor integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 4, 2010·0 cites·19 claims
- 0946US7005373B2Method for forming a metal silicide layer in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 28, 2006·1 cites·10 claims
- 1043US2005236715A1Nickel alloy salicide transistor structure and method for manufacturing sameKU JA-HUM·Filed 2005·Application pending·0 cites
- 1138US7569483B2Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 4, 2009·0 cites·12 claims
- 1238US2006003534A1Salicide process using bi-metal layer and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1336US2005158996A1Nickel salicide processes and methods of fabricating semiconductor devices using the sameFiled 2004·Application pending·0 cites
- 1436US2006223296A1Semiconductor device having self-aligned silicide layer and method thereofSUN MIN-CHUL·Filed 2005·Application pending·0 cites
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