Inventor · disambiguated record
Maxi Andenna
Also filed as: ANDENNA MAXI
9 granted patents·1 pending application·19 citations·filing 2012–2021
81Inventor score
Top patents by PatentIndex Score
10 records- 0182US9064925B2Power semiconductor deviceABB TECHNOLOGY AG·Filed 2012·Granted Jun 23, 2015·7 cites·23 claims
- 0278US9105680B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2014·Granted Aug 11, 2015·5 cites·20 claims
- 0377US9099520B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2014·Granted Aug 4, 2015·4 cites·19 claims
- 0468US8829563B2Power semiconductor device and method for manufacturing such a power semiconductor deviceABB TECHNOLOGY AG·Filed 2013·Granted Sep 9, 2014·2 cites·20 claims
- 0562US9006041B2Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor deviceABB TECHNOLOGY AG·Filed 2013·Granted Apr 14, 2015·1 cites·17 claims
- 0648US9153676B2Insulated gate bipolar transistorABB TECHNOLOGY AG·Filed 2014·Granted Oct 6, 2015·0 cites·18 claims
- 0741US10629714B2Insulated gate bipolar transistorABB SCHWEIZ AG·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 0838US12199141B2Semiconductor device with gradual injection of charge carriers for softer reverse recoveryHITACHI ENERGY LTD·Filed 2021·Granted Jan 14, 2025·0 cites·20 claims
- 0937US2021391481A1Power Semiconductor Device and Shadow-Mask Free Method for Producing Such DeviceABB POWER GRIDS SWITZERLAND AG·Filed 2019·Application pending·0 cites
- 1036US9722040B2Method for manufacturing an insulated gate bipolar transistorABB SCHWEIZ AG·Filed 2015·Granted Aug 1, 2017·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →