Inventor · disambiguated record
Bruce D. Marchant
Also filed as: MARCHANT BRUCE · MARCHANT BRUCE D · MARCHANT BRUCE DOUGLAS
25 granted patents·3 pending applications·855 citations·filing 1998–2013
97Inventor score
Top patents by PatentIndex Score
28 records- 0198US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0298US7449354B2Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etchFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 11, 2008·99 cites·39 claims
- 0397US8143124B2Methods of making power semiconductor devices with thick bottom oxide layerCHALLA ASHOK·Filed 2008·Granted Mar 27, 2012·148 cites·6 claims
- 0497US7446374B2High density trench FET with integrated Schottky diode and method of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 4, 2008·78 cites·28 claims
- 0596US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 0695US7485532B2Method of forming trench gate FETs with reduced gate to drain chargeFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Feb 3, 2009·29 cites·19 claims
- 0795US7382019B2Trench gate FETs with reduced gate to drain chargeFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jun 3, 2008·33 cites·23 claims
- 0895US6713813B2Field effect transistor having a lateral depletion structureFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Mar 30, 2004·104 cites·15 claims
- 0994US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 1094US7772642B2Power trench gate FET with active gate trenches that are contiguous with gate runner trenchFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Aug 10, 2010·20 cites·5 claims
- 1194US7713822B2Method of forming high density trench FET with integrated Schottky diodeFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 11, 2010·31 cites·19 claims
- 1292US7902071B2Method for forming active and gate runner trenchesFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Mar 8, 2011·9 cites·12 claims
- 1392US7078296B2Self-aligned trench MOSFETs and methods for making the sameFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jul 18, 2006·69 cites·24 claims
- 1490US8936985B2Methods related to power semiconductor devices with thick bottom oxide layersCHALLA ASHOK·Filed 2012·Granted Jan 20, 2015·6 cites·12 claims
- 1590US6818513B2Method of forming a field effect transistor having a lateral depletion structureFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Nov 16, 2004·41 cites·15 claims
- 1687US7936007B2LDMOS with self aligned vertical LDD backside drainFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted May 3, 2011·11 cites·12 claims
- 1786US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 1886US8829641B2Method of forming a dual-trench field effect transistorMARCHANT BRUCE D·Filed 2010·Granted Sep 9, 2014·8 cites·9 claims
- 1978US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 2072US8450177B2LDMOS with self aligned vertical LDD backside drainMARCHANT BRUCE D·Filed 2011·Granted May 28, 2013·3 cites·18 claims
- 2171US7884390B2Structure and method of forming a topside contact to a backside terminal of a semiconductor deviceFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Feb 8, 2011·4 cites·26 claims
- 2268US7781835B2Lateral drain MOSFET with improved clamping voltage controlFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Aug 24, 2010·3 cites·10 claims
- 2361US6033489ASemiconductor substrate and method of making sameFAIRCHILD SEMICONDUCTOR·Filed 1998·Granted Mar 7, 2000·27 cites·8 claims
- 2459US2009230465A1Trench-Gate Field Effect Transistors and Methods of Forming the SameYILMAZ HAMZA·Filed 2009·Application pending·0 cites
- 2545US7998819B2Lateral drain MOSFET with improved clamping voltage controlFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Aug 16, 2011·0 cites·11 claims
- 2641US8536042B2Method of forming a topside contact to a backside terminal of a semiconductor deviceANDREWS JOHN T·Filed 2010·Granted Sep 17, 2013·0 cites·18 claims
- 2740US2005029618A1Structure and method of forming a dual-trench field effect transistorFiled 2004·Application pending·0 cites
- 2830US2003060013A1Method of manufacturing trench field effect transistors with trenched heavy bodyFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →