Inventor · disambiguated record
Toshiaki Asahi
Also filed as: ASAHI TOSHIAKI
15 granted patents·2 pending applications·59 citations·filing 1994–2019
89Inventor score
Files withNIPPON MINING CO7JAPAN ENERGY CORP3ASAHI TOSHIAKI2JX NIPPON MINING & METALS CORP2UNIV IBARAKI2
Top patents by PatentIndex Score
17 records- 0168US6334897B1Method of manufacturing compound semiconductor single crystalJAPAN ENERGY CORP·Filed 1999·Granted Jan 1, 2002·23 cites·11 claims
- 0265US7358159B2Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2002·Granted Apr 15, 2008·6 cites·17 claims
- 0359US11935974B2Semiconductor material, infrared light receiving element and method for producing semiconductor materialUNIV IBARAKI·Filed 2019·Granted Mar 19, 2024·0 cites·7 claims
- 0457US7696073B2Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystalNIPPON MINING CO·Filed 2007·Granted Apr 13, 2010·0 cites·2 claims
- 0557US7629625B2Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2007·Granted Dec 8, 2009·0 cites·4 claims
- 0657US7521282B2Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2007·Granted Apr 21, 2009·0 cites·9 claims
- 0757US7517720B2Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor deviceNIPPON MINING CO·Filed 2007·Granted Apr 14, 2009·0 cites·9 claims
- 0857US5603763AMethod for growing single crystalJAPAN ENERGY CORP·Filed 1994·Granted Feb 18, 1997·14 cites·6 claims
- 0955US5871580AMethod of growing a bulk crystalJAPAN ENERGY CORP·Filed 1995·Granted Feb 16, 1999·12 cites·19 claims
- 1052US7175705B2Process for producing compound semiconductor single crystalNIPPON MINING CO·Filed 2001·Granted Feb 13, 2007·3 cites·9 claims
- 1150US7229494B2Production method for compound semiconductor single crystalNIPPON MINING CO·Filed 2002·Granted Jun 12, 2007·1 cites·8 claims
- 1248US10641807B2Optical modulator and electric field sensorJX NIPPON MINING & METALS CORP·Filed 2016·Granted May 5, 2020·0 cites·12 claims
- 1345US8476171B2Heat treatment method of ZnTe single crystal substrate and ZnTe single crystal substrateASAHI TOSHIAKI·Filed 2006·Granted Jul 2, 2013·0 cites·4 claims
- 1444US11011664B2Photodiode and photosensitive deviceUNIV IBARAKI·Filed 2018·Granted May 18, 2021·0 cites·7 claims
- 1544US2013029278A1Method for synthesizing group ii-vi compound semiconductor polycrystalsJX NIPPON MINING & METALS CORP·Filed 2011·Application pending·0 cites
- 1641US2011236297A1Heat treatment method of znte single crystal substrate and znte single crystal substrateASAHI TOSHIAKI·Filed 2011·Application pending·0 cites
- 1740US6989059B2Process for producing single crystal of compound semiconductor and crystal growing apparatusNIKKO MATERIALS CO LTD·Filed 2003·Granted Jan 24, 2006·0 cites·5 claims
Join the waitlist — get patent alerts
Get an alert when Toshiaki Asahi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →