Inventor · disambiguated record
Mako Kobayashi
Also filed as: KOBAYASHI MAKO
18 granted patents·578 citations·filing 1998–2001
96Inventor score
Top patents by PatentIndex Score
18 records- 0193US6064621AMulti-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangementMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 16, 2000·103 cites·19 claims
- 0289US6768354B2Multi-power semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2001·Granted Jul 27, 2004·38 cites·24 claims
- 0389US6700434B2Substrate bias voltage generating circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 2, 2004·39 cites·15 claims
- 0487US6414881B1Semiconductor device capable of generating internal voltage effectivelyMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·45 cites·20 claims
- 0587US5914907ASemiconductor memory device capable of increasing chip yields while maintaining rapid operationMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 22, 1999·69 cites·8 claims
- 0684US6472926B2Internal voltage generation circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 29, 2002·49 cites·18 claims
- 0779US6515461B2Voltage downconverter circuit capable of reducing current consumption while keeping response rateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·27 cites·34 claims
- 0877US6072743AHigh speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 6, 2000·35 cites·7 claims
- 0973US6316985B1Substrate voltage generating circuit provided with a transistor having a thin gate oxide film and a semiconductor integrated circuit device provided with the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 13, 2001·26 cites·15 claims
- 1073US6215720B1High speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 10, 2001·18 cites·7 claims
- 1172US6429729B2Semiconductor integrated circuit device having circuit generating reference voltageMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 6, 2002·20 cites·4 claims
- 1272US6333669B1Voltage converting circuit allowing control of current drivability in accordance with operational frequencyMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 25, 2001·27 cites·16 claims
- 1371US6392472B1Constant internal voltage generation circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 21, 2002·20 cites·21 claims
- 1468US6424134B2Semiconductor integrated circuit device capable of stably generating internal voltage independent of an external power supply voltageMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 23, 2002·17 cites·20 claims
- 1568US6272034B1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·16 cites·4 claims
- 1659US6515934B2Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip areaMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·10 cites·9 claims
- 1754US6331962B1Semiconductor device including voltage down converter allowing tuning in short period of time and reduction of chip areaMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 18, 2001·8 cites·12 claims
- 1844US6337506B2Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip areaMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 8, 2002·11 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →