Inventor · disambiguated record
David L. Rath
Also filed as: RATH DAVID · RATH DAVID L · RATH DAVID LEE
76 granted patents·12 pending applications·1,157 citations·filing 1990–2020
99Inventor score
Top patents by PatentIndex Score
88 records- 0199US9324650B2Interconnect structures with fully aligned viasIBM·Filed 2014·Granted Apr 26, 2016·79 cites·7 claims
- 0298US9685406B1Selective and non-selective barrier layer wet removalIBM·Filed 2016·Granted Jun 20, 2017·34 cites·14 claims
- 0396US10090247B1Semiconductor device formed by wet etch removal of Ru selective to other metalsIBM·Filed 2017·Granted Oct 2, 2018·13 cites·14 claims
- 0495US7446036B1Gap free anchored conductor and dielectric structure and method for fabrication thereofIBM·Filed 2007·Granted Nov 4, 2008·42 cites·1 claims
- 0595US6975032B2Copper recess process with application to selective capping and electroless platingIBM·Filed 2002·Granted Dec 13, 2005·85 cites·19 claims
- 0694US9564494B1Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2015·Granted Feb 7, 2017·9 cites·20 claims
- 0794US7517736B2Structure and method of chemically formed anchored metallic viasIBM·Filed 2006·Granted Apr 14, 2009·34 cites·7 claims
- 0893US11857997B2Metal surface protectionIBM·Filed 2020·Granted Jan 2, 2024·2 cites·8 claims
- 0993US11575077B2Microfabricated air bridges for quantum circuitsIBM·Filed 2020·Granted Feb 7, 2023·3 cites·21 claims
- 1093US10002831B2Selective and non-selective barrier layer wet removalIBM·Filed 2017·Granted Jun 19, 2018·7 cites·15 claims
- 1193US9806023B1Selective and non-selective barrier layer wet removalIBM·Filed 2017·Granted Oct 31, 2017·8 cites·20 claims
- 1292US9911690B2Interconnect structures with fully aligned viasIBM·Filed 2016·Granted Mar 6, 2018·6 cites·12 claims
- 1392US7064064B2Copper recess process with application to selective capping and electroless platingIBM·Filed 2005·Granted Jun 20, 2006·22 cites·10 claims
- 1491US9881833B1Barrier planarization for interconnect metallizationIBM·Filed 2016·Granted Jan 30, 2018·6 cites·16 claims
- 1591US8617689B2Bonding of substrates including metal-dielectric patterns with metal raised above dielectric and structures so formedCHEN KUAN-NENG·Filed 2012·Granted Dec 31, 2013·10 cites·9 claims
- 1690US7993816B2Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefromIBM·Filed 2008·Granted Aug 9, 2011·11 cites·16 claims
- 1790US5800626AControl of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substratesIBM·Filed 1997·Granted Sep 1, 1998·142 cites·14 claims
- 1889US8492239B2Homogeneous porous low dielectric constant materialsBRUCE ROBERT L·Filed 2012·Granted Jul 23, 2013·10 cites·20 claims
- 1988US6584989B2Apparatus and method for wet cleaningIBM·Filed 2001·Granted Jul 1, 2003·50 cites·16 claims
- 2086US8003520B2Air gap structure having protective metal silicide pads on a metal featureIBM·Filed 2010·Granted Aug 23, 2011·6 cites·10 claims
- 2185US7537709B2Method for isotropic etching of copperIBM·Filed 2006·Granted May 26, 2009·9 cites·12 claims
- 2284US11094873B2Transmon qubits with self defined junctionsIBM·Filed 2019·Granted Aug 17, 2021·2 cites·22 claims
- 2384US8969122B2Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefromFISHER KATHRYN C·Filed 2011·Granted Mar 3, 2015·4 cites·11 claims
- 2484US8835326B2Titanium-nitride removalFITZSIMMONS JOHN A·Filed 2012·Granted Sep 16, 2014·6 cites·22 claims
- 2584US7056648B2Method for isotropic etching of copperIBM·Filed 2003·Granted Jun 6, 2006·29 cites·15 claims
- 2682US9608134B2Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefromIBM·Filed 2015·Granted Mar 28, 2017·2 cites·15 claims
- 2781US10043663B2Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2016·Granted Aug 7, 2018·2 cites·20 claims
- 2880US8241995B2Bonding of substrates including metal-dielectric patterns with metal raised above dielectricCHEN KUAN-NENG·Filed 2006·Granted Aug 14, 2012·7 cites·18 claims
- 2979US10211153B2Low aspect ratio interconnectIBM·Filed 2016·Granted Feb 19, 2019·2 cites·13 claims
- 3079US9070625B2Selective etch chemistry for gate electrode materialsIBM·Filed 2013·Granted Jun 30, 2015·3 cites·19 claims
- 3178US6200891B1Removal of dielectric oxidesIBM·Filed 1998·Granted Mar 13, 2001·54 cites·29 claims
- 3277US11075281B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2019·Granted Jul 27, 2021·1 cites·20 claims
- 3377US9735224B1Patterning magnetic films using self-stop electro-etchingIBM·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 3476US6033996AProcess for removing etching residues, etching mask and silicon nitride and/or silicon dioxideIBM·Filed 1997·Granted Mar 7, 2000·48 cites·23 claims
- 3576US5962384AMethod for cleaning semiconductor devicesIBM·Filed 1997·Granted Oct 5, 1999·40 cites·9 claims
- 3675US10204856B2Interconnect structures with fully aligned viasIBM·Filed 2017·Granted Feb 12, 2019·1 cites·6 claims
- 3773US7670497B2Oxidant and passivant composition and method for use in treating a microelectronic structureIBM·Filed 2007·Granted Mar 2, 2010·4 cites·1 claims
- 3871US10242909B2Wet etch removal of Ru selective to other metalsIBM·Filed 2017·Granted Mar 26, 2019·1 cites·22 claims
- 3971US7253098B2Maintaining uniform CMP hard mask thicknessIBM·Filed 2004·Granted Aug 7, 2007·13 cites·7 claims
- 4071US5780363AEtching composition and use thereofIBM·Filed 1997·Granted Jul 14, 1998·43 cites·19 claims
- 4171US5576099AInductive head lamination with layer of magnetic quenching materialIBM·Filed 1990·Granted Nov 19, 1996·21 cites·10 claims
- 4269US7884477B2Air gap structure having protective metal silicide pads on a metal featureIBM·Filed 2007·Granted Feb 8, 2011·2 cites·16 claims
- 4368US7985928B2Gap free anchored conductor and dielectric structure and method for fabrication thereofIBM·Filed 2008·Granted Jul 26, 2011·3 cites·1 claims
- 4468US7976723B2Method for kinetically controlled etching of copperIBM·Filed 2007·Granted Jul 12, 2011·2 cites·21 claims
- 4568US6167891B1Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafersINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jan 2, 2001·35 cites·18 claims
- 4667US10074562B2Self aligned contact structureIBM·Filed 2016·Granted Sep 11, 2018·1 cites·8 claims
- 4767US5965465AEtching of silicon nitrideIBM·Filed 1997·Granted Oct 12, 1999·28 cites·17 claims
- 4865US11152489B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 4964US8298948B2Capping of copper interconnect lines in integrated circuit devicesBONILLA GRISELDA·Filed 2009·Granted Oct 30, 2012·2 cites·20 claims
- 5064US6066267AEtching of silicon nitrideIBM·Filed 1999·Granted May 23, 2000·24 cites·10 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →