Inventor · disambiguated record
Michael D. Craven
Also filed as: CRAVEN MICHAEL · CRAVEN MICHAEL D
13 granted patents·10 pending applications·376 citations·filing 2003–2025
92Inventor score
Files withUNIV CALIFORNIA7CRAVEN MICHAEL D6HASKELL BENJAMIN A3MEDTRONIC VASCULAR INC3SEMICONDUCTOR COMPONENTS IND LLC2
Top patents by PatentIndex Score
23 records- 0198US6900070B2Dislocation reduction in non-polar gallium nitride thin filmsUNIV CALIFORNIA·Filed 2003·Granted May 31, 2005·135 cites·22 claims
- 0296US7220658B2Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted May 22, 2007·105 cites·21 claims
- 0395US7091514B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2003·Granted Aug 15, 2006·70 cites·9 claims
- 0489US8188458B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesCRAVEN MICHAEL D·Filed 2011·Granted May 29, 2012·7 cites·21 claims
- 0589US7847293B2Growth of reduced dislocation density non-polar gallium nitrideUNIV CALIFORNIA·Filed 2007·Granted Dec 7, 2010·10 cites·9 claims
- 0684US8052738B2Intraluminal flexible stent deviceMEDTRONIC VASCULAR INC·Filed 2008·Granted Nov 8, 2011·35 cites·14 claims
- 0770US12224344B2Method and system for control of sidewall orientation in vertical gallium nitride field effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Feb 11, 2025·0 cites·14 claims
- 0868US9039834B2Non-polar gallium nitride thin films grown by metalorganic chemical vapor depositionCRAVEN MICHAEL D·Filed 2011·Granted May 26, 2015·1 cites·13 claims
- 0968US7427555B2Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted Sep 23, 2008·11 cites·18 claims
- 1067US7982208B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2006·Granted Jul 19, 2011·1 cites·26 claims
- 1165US2025151319A1Method and system for control of sidewall orientation in vertical gallium nitride field effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 1263US8809867B2Dislocation reduction in non-polar III-nitride thin filmsCRAVEN MICHAEL D·Filed 2007·Granted Aug 19, 2014·1 cites·12 claims
- 1354US2012205623A1NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICESCRAVEN MICHAEL D·Filed 2012·Application pending·0 cites
- 1451US9893236B2Non-polar (Al,B,In,Ga)N quantum wellsUNIV CALIFORNIA·Filed 2015·Granted Feb 13, 2018·0 cites·18 claims
- 1551US2010269950A1Apparatus and Method for Forming a Wave Form for a Stent From a WireMEDTRONIC VASCULAR INC·Filed 2009·Application pending·0 cites
- 1648US8450192B2Growth of planar, non-polar, group-III nitride filmsHASKELL BENJAMIN A·Filed 2008·Granted May 28, 2013·0 cites·22 claims
- 1747US2012068184A1Dislocation reduction in non-polar iii-nitride thin filmsCRAVEN MICHAEL D·Filed 2011·Application pending·0 cites
- 1847US2012074425A1Growth of reduced dislocation density non-polar gallium nitrideHASKELL BENJAMIN A·Filed 2011·Application pending·0 cites
- 1947US2008319535A1Vascular Stent and Method of Making Vascular StentMEDTRONIC VASCULAR INC·Filed 2007·Application pending·0 cites
- 2045US2011278585A1Growth of reduced dislocation density non-polar gallium nitrideHASKELL BENJAMIN A·Filed 2010·Application pending·0 cites
- 2141US2007128844A1Non-polar (a1,b,in,ga)n quantum wellsCRAVEN MICHAEL D·Filed 2003·Application pending·0 cites
- 2237US2020313049A1Light emitting diode packageSORAA INC·Filed 2017·Application pending·0 cites
- 2336US2011177638A1Semiconductor light emitting device with curvature control layerKONINKL PHILIPS ELECTRONICS NV·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →