Inventor · disambiguated record
Edward C. Cooney, Iii
Also filed as: COONEY EDWARD C · COONEY EDWARD C III · COONEY EDWARD CRANDAL · COONEY III EDWARD
69 granted patents·13 pending applications·922 citations·filing 1996–2017
99Inventor score
Top patents by PatentIndex Score
82 records- 0195US8791778B2Vertical integrated circuit switches, design structure and methods of fabricating sameIBM·Filed 2013·Granted Jul 29, 2014·14 cites·9 claims
- 0295US8604618B2Structure and method for reducing vertical crack propagationCOONEY III EDWARD C·Filed 2011·Granted Dec 10, 2013·24 cites·21 claims
- 0393US8604898B2Vertical integrated circuit switches, design structure and methods of fabricating sameANDERSON FELIX P·Filed 2009·Granted Dec 10, 2013·23 cites·19 claims
- 0492US7741226B2Optimal tungsten through wafer via and process of fabricating sameIBM·Filed 2008·Granted Jun 22, 2010·31 cites·22 claims
- 0591US9355936B2Flattened substrate surface for substrate bondingGLOBALFOUNDRIES INC·Filed 2014·Granted May 31, 2016·16 cites·20 claims
- 0691US8129286B2Reducing effective dielectric constant in semiconductor devicesEDELSTEIN DANIEL C·Filed 2008·Granted Mar 6, 2012·11 cites·32 claims
- 0791US7892940B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Feb 22, 2011·11 cites·25 claims
- 0891US7405147B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2004·Granted Jul 29, 2008·35 cites·31 claims
- 0991US7015150B2Exposed pore sealing post patterningIBM·Filed 2004·Granted Mar 21, 2006·42 cites·18 claims
- 1091US5930655AFluorine barrier layer between conductor and insulator for degradation preventionIBM·Filed 1997·Granted Jul 27, 1999·87 cites·2 claims
- 1189US8343868B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2011·Granted Jan 1, 2013·6 cites·20 claims
- 1289US6838355B1Damascene interconnect structures including etchback for low-k dielectric materialsIBM·Filed 2003·Granted Jan 4, 2005·54 cites·40 claims
- 1389US6066577AMethod for providing fluorine barrier layer between conductor and insulator for degradation preventionIBM·Filed 1997·Granted May 23, 2000·76 cites·18 claims
- 1488US6846741B2Sacrificial metal spacer damascene processIBM·Filed 2002·Granted Jan 25, 2005·38 cites·11 claims
- 1588US6310300B1Fluorine-free barrier layer between conductor and insulator for degradation preventionIBM·Filed 1996·Granted Oct 30, 2001·75 cites·19 claims
- 1687US7592685B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Sep 22, 2009·7 cites·20 claims
- 1787US6534394B1Process to create robust contacts and interconnectsIBM·Filed 2000·Granted Mar 18, 2003·36 cites·26 claims
- 1887US6214730B1Fluorine barrier layer between conductor and insulator for degradation preventionIBM·Filed 1999·Granted Apr 10, 2001·62 cites·3 claims
- 1984US6958540B2Dual damascene interconnect structures having different materials for line and via conductorsIBM·Filed 2003·Granted Oct 25, 2005·29 cites·6 claims
- 2083US9728509B1Laser scribe structures for a waferGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 8, 2017·3 cites·13 claims
- 2183US6888251B2Metal spacer in single and dual damascene processingIBM·Filed 2002·Granted May 3, 2005·26 cites·25 claims
- 2282US8575022B2Top corner rounding of damascene wire for insulator crack suppressionCHRISMAN GREGORY S·Filed 2011·Granted Nov 5, 2013·9 cites·22 claims
- 2379US7541679B2Exposed pore sealing post patterningIBM·Filed 2005·Granted Jun 2, 2009·5 cites·20 claims
- 2478US9711464B2Semiconductor chip with anti-reverse engineering functionIBM·Filed 2015·Granted Jul 18, 2017·3 cites·13 claims
- 2578US8778737B2Flattened substrate surface for substrate bondingCOONEY III EDWARD C·Filed 2011·Granted Jul 15, 2014·4 cites·22 claims
- 2678US8476099B2Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial regionCOONEY III EDWARD C·Filed 2010·Granted Jul 2, 2013·1 cites·19 claims
- 2776US9673091B2Structure for BEOL metal levels with multiple dielectric layers for improved dielectric to metal adhesionGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 6, 2017·2 cites·11 claims
- 2876US8052799B2By-product collecting processes for cleaning processesIBM·Filed 2006·Granted Nov 8, 2011·5 cites·16 claims
- 2975US7381637B2Metal spacer in single and dual damascence processingIBM·Filed 2005·Granted Jun 3, 2008·5 cites·17 claims
- 3075US6429524B1Ultra-thin tantalum nitride copper interconnect barrierIBM·Filed 2001·Granted Aug 6, 2002·20 cites·22 claims
- 3174US8765595B2Thick on-chip high-performance wiring structuresCOONEY III EDWARD C·Filed 2012·Granted Jul 1, 2014·3 cites·16 claims
- 3272US6674168B1Single and multilevel reworkIBM·Filed 2003·Granted Jan 6, 2004·17 cites·20 claims
- 3371US6982227B2Single and multilevel reworkIBM·Filed 2003·Granted Jan 3, 2006·16 cites·6 claims
- 3470US7303994B2Process for interfacial adhesion in laminate structures through patterned roughing of a surfaceIBM·Filed 2004·Granted Dec 4, 2007·10 cites·5 claims
- 3569US7972965B2Process for interfacial adhesion in laminate structures through patterned roughing of a surfaceIBM·Filed 2007·Granted Jul 5, 2011·2 cites·16 claims
- 3668US8878326B2Imager microlens structure having interfacial region for adhesion of protective layerIBM·Filed 2013·Granted Nov 4, 2014·0 cites·8 claims
- 3768US7300867B2Dual damascene interconnect structures having different materials for line and via conductorsIBM·Filed 2005·Granted Nov 27, 2007·3 cites·12 claims
- 3868US6339258B1Low resistivity tantalumIBM·Filed 1999·Granted Jan 15, 2002·27 cites·17 claims
- 3967US7327033B2Copper alloy via bottom linerIBM·Filed 2004·Granted Feb 5, 2008·10 cites·2 claims
- 4066US10141274B2Semiconductor chip with anti-reverse engineering functionIBM·Filed 2017·Granted Nov 27, 2018·1 cites·13 claims
- 4166US7655547B2Metal spacer in single and dual damascene processingIBM·Filed 2008·Granted Feb 2, 2010·2 cites·15 claims
- 4266US6176931B1Wafer clamp ring for use in an ionized physical vapor deposition apparatusIBM·Filed 1999·Granted Jan 23, 2001·28 cites·21 claims
- 4364US8294270B2Copper alloy via bottom linerEDELSTEIN DANIEL C·Filed 2011·Granted Oct 23, 2012·1 cites·12 claims
- 4464US7517802B2Method for reducing foreign material concentrations in etch chambersIBM·Filed 2006·Granted Apr 14, 2009·1 cites·8 claims
- 4563US7393777B2Sacrificial metal spacer damascene processIBM·Filed 2004·Granted Jul 1, 2008·8 cites·20 claims
- 4662US7879716B2Metal seed layer depositionIBM·Filed 2007·Granted Feb 1, 2011·2 cites·18 claims
- 4762US7863180B2Through substrate via including variable sidewall profileIBM·Filed 2008·Granted Jan 4, 2011·2 cites·13 claims
- 4859US7704876B2Dual damascene interconnect structures having different materials for line and via conductorsIBM·Filed 2007·Granted Apr 27, 2010·1 cites·13 claims
- 4959US6580140B1Metal oxide temperature monitorIBM·Filed 2000·Granted Jun 17, 2003·6 cites·15 claims
- 5057US10224276B2Integrated circuit including wire structure, related method and design structureGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 5, 2019·0 cites·14 claims
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