Inventor · disambiguated record
Paul J. Tsang
Also filed as: TSANG PAUL · TSANG PAUL J · TSANG PAUL J-M
23 granted patents·1,218 citations·filing 1975–1994
97Inventor score
Top patents by PatentIndex Score
23 records- 0198US4419809AFabrication process of sub-micrometer channel length MOSFETsIBM·Filed 1981·Granted Dec 13, 1983·332 cites·26 claims
- 0297US4366613AMethod of fabricating an MOS dynamic RAM with lightly doped drainIBM·Filed 1980·Granted Jan 4, 1983·115 cites·13 claims
- 0391US5015594AProcess of making BiCMOS devices having closely spaced device regionsIBM·Filed 1988·Granted May 14, 1991·122 cites·14 claims
- 0489US4028149AProcess for forming monocrystalline silicon carbide on silicon substratesIBM·Filed 1976·Granted Jun 7, 1977·75 cites·12 claims
- 0582US5241203AInverse T-gate FET transistor with lightly doped source and drain regionIBM·Filed 1992·Granted Aug 31, 1993·53 cites·2 claims
- 0680US5120668AMethod of forming an inverse T-gate FET transistorIBM·Filed 1991·Granted Jun 9, 1992·46 cites·10 claims
- 0778US5374590AFabrication and laser deletion of microfusesIBM·Filed 1993·Granted Dec 20, 1994·65 cites·5 claims
- 0878US4546536AFabrication methods for high performance lateral bipolar transistorsIBM·Filed 1983·Granted Oct 15, 1985·42 cites·15 claims
- 0977US5465859ADual phase and hybrid phase shifting mask fabrication using a surface etch monitoring techniqueIBM·Filed 1994·Granted Nov 14, 1995·30 cites·10 claims
- 1076US4890287AOn-the-fly error correctionMAGNETIC PERIPHERALS INC·Filed 1988·Granted Dec 26, 1989·27 cites·9 claims
- 1175US4392149ABipolar transistorIBM·Filed 1981·Granted Jul 5, 1983·41 cites·1 claims
- 1273US4510676AMethod of fabricating a lateral PNP transistorIBM·Filed 1983·Granted Apr 16, 1985·26 cites·4 claims
- 1371US4583106AFabrication methods for high performance lateral bipolar transistorsIBM·Filed 1985·Granted Apr 15, 1986·39 cites·14 claims
- 1471US4442589AMethod for manufacturing field effect transistorsIBM·Filed 1981·Granted Apr 17, 1984·35 cites·9 claims
- 1571US4309812AProcess for fabricating improved bipolar transistor utilizing selective etchingIBM·Filed 1980·Granted Jan 12, 1982·33 cites·11 claims
- 1670US4492008AMethods for making high performance lateral bipolar transistorsIBM·Filed 1983·Granted Jan 8, 1985·31 cites·13 claims
- 1769US5340775AStructure and fabrication of SiCr microfusesIBM·Filed 1993·Granted Aug 23, 1994·40 cites·12 claims
- 1856US4403394AFormation of bit lines for ram deviceIBM·Filed 1980·Granted Sep 13, 1983·20 cites·13 claims
- 1953US4728624ASelective epitaxial growth structure and isolationIBM·Filed 1985·Granted Mar 1, 1988·14 cites·10 claims
- 2050US5285099ASiCr microfusesIBM·Filed 1992·Granted Feb 8, 1994·17 cites·4 claims
- 2136US4908691ASelective epitaxial growth structure and isolationIBM·Filed 1987·Granted Mar 13, 1990·5 cites·15 claims
- 2235US3998674AMethod for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etchingIBM·Filed 1975·Granted Dec 21, 1976·8 cites·6 claims
- 2332US4960717AFabrication of dielectrically isolated integrated circuit devicesIBM·Filed 1988·Granted Oct 2, 1990·2 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →