Inventor · disambiguated record
Youbo Lin
Also filed as: LIN YOUBO
9 granted patents·7 pending applications·51 citations·filing 2010–2024
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8HARVARD COLLEGE3IBM2GLOBAL FOUNDRIES INC1GLOBALFOUNDRIES INC1
Top patents by PatentIndex Score
16 records- 0195US8569165B2Self-aligned barrier and capping layers for interconnectsGORDON ROY GERALD·Filed 2010·Granted Oct 29, 2013·40 cites·8 claims
- 0288US11328982B2Air gap seal for interconnect air gap and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·2 cites·20 claims
- 0388US9112005B2Self-aligned barrier and capping layers for interconnectsHARVARD COLLEGE·Filed 2013·Granted Aug 18, 2015·7 cites·29 claims
- 0480US9390971B2Self-aligned barrier and capping layers for interconnectsHARVARD COLLEGE·Filed 2015·Granted Jul 12, 2016·2 cites·6 claims
- 0577US2024096971A1Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0677US2024312876A1Air Gap Seal for Interconnect Air Gap and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0776US11855155B2Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 0873US11996353B2Air gap seal for interconnect air gap and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 0969US11302784B2Semiconductor device having contact feature and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 1068US11621350B2Transistor structure and method with strain effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 1160US11094821B2Transistor structure and method with strain effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 1254US2017012001A1Self-aligned barrier and capping layers for interconnectsHARVARD COLLEGE·Filed 2016·Application pending·0 cites
- 1352US2015097274A1Through-silicon via structure and method for improving beol dielectric performanceIBM·Filed 2014·Application pending·0 cites
- 1449US2015069608A1Through-silicon via structure and method for improving beol dielectric performanceIBM·Filed 2013·Application pending·0 cites
- 1540US2014167265A1Methods of forming a bi-layer cap layer on copper-based conductive structures and devices with such a cap layerGLOBAL FOUNDRIES INC·Filed 2012·Application pending·0 cites
- 1633US2016379818A1Insulating a via in a semiconductor substrateGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →