Inventor · disambiguated record
Tung-Ming Lai
Also filed as: LAI TUNG-MING
7 granted patents·5 pending applications·12 citations·filing 2001–2024
77Inventor score
Files withPOTENS SEMICONDUCTOR CORP3HSU CHEN-CHIU2NIEH TSAI-CHIANG2LAI TUNG-MING1MAXCHIP ELECTRONICS CORP1
Top patents by PatentIndex Score
12 records- 0178US8907395B2Semiconductor structureHSU CHEN-CHIU·Filed 2011·Granted Dec 9, 2014·7 cites·9 claims
- 0264US8980703B2Method of forming semiconductor structureMAXCHIP ELECTRONICS CORP·Filed 2014·Granted Mar 17, 2015·2 cites·4 claims
- 0359US8895386B2Method of forming semiconductor structureHSU CHEN-CHIU·Filed 2012·Granted Nov 25, 2014·2 cites·14 claims
- 0458US2025323047A1Wafer stress relief structure and method for manufacturing the samePOTENS SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 0556US7074674B1Method for manufacturing one-time electrically programmable read only memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jul 11, 2006·1 cites·17 claims
- 0652US12101026B2Metal-oxide semiconductor field-effect transistor with asymmetric parallel dies and method of using the samePOTENS SEMICONDUCTOR CORP·Filed 2021·Granted Sep 24, 2024·0 cites·5 claims
- 0737US8502328B2Micro electronic mechanical system structureNIEH TSAI-CHIANG·Filed 2012·Granted Aug 6, 2013·0 cites·4 claims
- 0833US8163583B2Manufacturing method of micro electronic mechanical system structureNIEH TSAI-CHIANG·Filed 2010·Granted Apr 24, 2012·0 cites·20 claims
- 0932US2023039285A1Hybrid metal-oxide semiconductor field-effect transistor with variable gate impedance and implementation method thereofPOTENS SEMICONDUCTOR CORP·Filed 2021·Application pending·0 cites
- 1030US2012008364A1One time programmable memory and the manufacturing method and operation method thereofLAI TUNG-MING·Filed 2010·Application pending·0 cites
- 1128US2002187616A1Method of eliminating leakage current in shallow trench isolationFiled 2001·Application pending·0 cites
- 1226US2002185698A1Gate for preventing dopants from penetrating a gate insulator and method of forming the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →