Inventor · disambiguated record
Tzu-Yang Ho
Also filed as: HO TZU-YANG
6 granted patents·3 pending applications·7 citations·filing 2020–2025
74Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9
Top patents by PatentIndex Score
9 records- 0197US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0293US11742399B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
- 0385US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 0485US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0581US12255240B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 0676US11973027B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·14 claims
- 0774US2025185338A1Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0874US2024387663A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0966US12199157B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →