Inventor · disambiguated record
Jens Prima
Also filed as: PRIMA JENS
15 granted patents·5 pending applications·44 citations·filing 2001–2020
90Inventor score
Files withST MICROELECTRONICS NV6INFINEON TECHNOLOGIES AG3MARTY MICHEL3ST MICROELECTRONICS SA2PMD TECH AG1
Top patents by PatentIndex Score
20 records- 0189US8704282B2Method for forming a back-side illuminated image sensorMARTY MICHEL·Filed 2012·Granted Apr 22, 2014·7 cites·20 claims
- 0283US8981516B2Back-side illuminated image sensor provided with a transparent electrodePRIMA JENS·Filed 2012·Granted Mar 17, 2015·5 cites·17 claims
- 0383US7701023B2TFA image sensor with stability-optimized photodiodeST MICROELECTRONICS NV·Filed 2007·Granted Apr 20, 2010·9 cites·28 claims
- 0475US8847344B2Process for fabricating a backside-illuminated imaging device and corresponding deviceROY FRANCOIS·Filed 2012·Granted Sep 30, 2014·1 cites·15 claims
- 0574US10541261B2Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 21, 2020·2 cites·28 claims
- 0672US7326589B2Method for producing a TFA image sensor and one such TFA image sensorST MICROELECTRONICS NV·Filed 2005·Granted Feb 5, 2008·3 cites·11 claims
- 0771US10436883B2Light propagation time sensor with a charge compensation devicePMD TECH AG·Filed 2015·Granted Oct 8, 2019·5 cites·10 claims
- 0871US8963273B2Back-side illuminated image sensor with a junction insulationST MICROELECTRONICS SA·Filed 2014·Granted Feb 24, 2015·0 cites·8 claims
- 0966US10545225B2Optical sensor device with deep and shallow control electrodesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 28, 2020·1 cites·26 claims
- 1065US8703528B2Method for forming a back-side illuminated image sensor with a junction insulationMARTY MICHEL·Filed 2012·Granted Apr 22, 2014·0 cites·5 claims
- 1163US11175389B2Optical sensor device with deep and shallow control electrodesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Nov 16, 2021·0 cites·27 claims
- 1256US7382034B2Optoelectronic component having a conductive contact structureST MICROELECTRONICS NV·Filed 2002·Granted Jun 3, 2008·8 cites·21 claims
- 1352US2006223214A1Optoelectronic component for converting electromagnetic radiation into a intensity-dependent photocurrentST MICROELECTRONICS NV·Filed 2006·Application pending·0 cites
- 1449US7709916B2Optical semiconductor device having photosensitive diodes and process for fabricating such a deviceST MICROELECTRONICS SA·Filed 2006·Granted May 4, 2010·0 cites·18 claims
- 1547US7053457B2Opto-electronic componentST MICROELECTRONICS NV·Filed 2002·Granted May 30, 2006·3 cites·37 claims
- 1646US2014374808A1Semiconductor component with trench gatePMDT Technologies GmbH·Filed 2012·Application pending·0 cites
- 1740US2005042794A1Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrentSTMICROELECTRONIC N V·Filed 2004·Application pending·0 cites
- 1839US8524522B2Microelectronic device, in particular back side illuminated image sensor, and production processMARTY MICHEL·Filed 2010·Granted Sep 3, 2013·0 cites·14 claims
- 1937US2006006482A1Tfa image sensor with stability-optimized photodiodeST MICROELECTRONICS NV·Filed 2003·Application pending·0 cites
- 2036US2004113220A1Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrentFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →