Inventor · disambiguated record
John E. Northrup
Also filed as: NORTHRUP JOHN E
35 granted patents·2 pending applications·598 citations·filing 1993–2018
97Inventor score
Top patents by PatentIndex Score
37 records- 0196US9401452B2P-side layers for short wavelength light emittersNORTHRUP JOHN E·Filed 2012·Granted Jul 26, 2016·33 cites·20 claims
- 0296US9252329B2Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extractionNORTHRUP JOHN E·Filed 2011·Granted Feb 2, 2016·22 cites·23 claims
- 0395US6064078AFormation of group III-V nitride films on sapphire substrates with reduced dislocation densitiesXEROX CORP·Filed 1998·Granted May 16, 2000·181 cites·40 claims
- 0494US9419194B2Transparent electron blocking hole transporting layerPALO ALTO RES CT INC·Filed 2013·Granted Aug 16, 2016·8 cites·15 claims
- 0593US9219189B2Graded electron blocking layerNORTHRUP JOHN E·Filed 2012·Granted Dec 22, 2015·12 cites·29 claims
- 0693US6416158B1Ballistic aerosol marking apparatus with stacked electrode structureXEROX CORP·Filed 1999·Granted Jul 9, 2002·72 cites·22 claims
- 0789US9112332B2Electron beam pumped vertical cavity surface emitting laserWUNDERER THOMAS·Filed 2012·Granted Aug 18, 2015·8 cites·35 claims
- 0889US8964796B2Structure for electron-beam pumped edge-emitting device and methods for producing samePALO ALTO RES CT INC·Filed 2013·Granted Feb 24, 2015·9 cites·42 claims
- 0989US6437374B1Semiconductor device and method of forming a semiconductor deviceXEROX CORP·Filed 2001·Granted Aug 20, 2002·46 cites·42 claims
- 1088US6744072B2Substrates having increased thermal conductivity for semiconductor structuresXEROX CORP·Filed 2001·Granted Jun 1, 2004·23 cites·25 claims
- 1187US9112331B2Surface emitting laser incorporating third reflectorNORTHRUP JOHN E·Filed 2012·Granted Aug 18, 2015·8 cites·19 claims
- 1285US6618418B2Dual III-V nitride laser structure with reduced thermal cross-talkXEROX CORP·Filed 2001·Granted Sep 9, 2003·23 cites·21 claims
- 1381US9660134B1Nitride semiconductor polarization controlled devicePALO ALTO RES CT INC·Filed 2016·Granted May 23, 2017·3 cites·22 claims
- 1481US9124062B2Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflectorWUNDERER THOMAS·Filed 2012·Granted Sep 1, 2015·5 cites·22 claims
- 1580US6869821B2Method for producing organic electronic devices on deposited dielectric materialsXEROX CORP·Filed 2002·Granted Mar 22, 2005·25 cites·17 claims
- 1679US8247249B2Semi-polar nitride-based light emitting structure and method of forming sameSTRITTMATTER ANDRE·Filed 2010·Granted Aug 21, 2012·4 cites·11 claims
- 1777US7235430B2Substrates having increased thermal conductivity for semiconductor structuresXEROX CORP·Filed 2004·Granted Jun 26, 2007·11 cites·20 claims
- 1877US5455429ASemiconductor devices incorporating p-type and n-type impurity induced layer disordered materialXEROX CORP·Filed 1993·Granted Oct 3, 1995·33 cites·25 claims
- 1976US8330144B2Semi-polar nitride-based light emitting structure and method of forming sameSTRITTMATTER ANDRE·Filed 2012·Granted Dec 11, 2012·3 cites·7 claims
- 2072US9705288B2Electron beam pumped vertical cavity surface emitting laserPALO ALTO RES CT INC·Filed 2015·Granted Jul 11, 2017·1 cites·21 claims
- 2169US10008629B2Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extractionPALO ALTO RES CT INC·Filed 2016·Granted Jun 26, 2018·1 cites·15 claims
- 2262US10153616B2Electron beam pumped vertical cavity surface emitting laserPALO ALTO RES CT INC·Filed 2017·Granted Dec 11, 2018·0 cites·19 claims
- 2359US10249793B2Transparent electron blocking hole transporting layerPALO ALTO RES CT INC·Filed 2018·Granted Apr 2, 2019·0 cites·13 claims
- 2456US9882089B2Transparent electron blocking hole transporting layerPALO ALTO RES CT INC·Filed 2016·Granted Jan 30, 2018·0 cites·15 claims
- 2556US5608753ASemiconductor devices incorporating p-type and n-type impurity induced layer disordered materialXEROX CORP·Filed 1995·Granted Mar 4, 1997·22 cites·22 claims
- 2656US5376583AMethod for producing P-type impurity induced layer disorderingXEROX CORP·Filed 1993·Granted Dec 27, 1994·24 cites·20 claims
- 2755US9960355B2Organic polymer semiconductors with increased interdomain connectivity and mobilityPALO ALTO RES CT INC·Filed 2014·Granted May 1, 2018·0 cites·9 claims
- 2855US8048703B2Light emitting devices with inhomogeneous quantum well active regionsPALO ALTO RES CT INC·Filed 2010·Granted Nov 1, 2011·0 cites·5 claims
- 2955US7310358B2Semiconductor lasersPALO ALTO RES CT INC·Filed 2004·Granted Dec 18, 2007·3 cites·34 claims
- 3055US6583449B2Semiconductor device and method of forming a semiconductor deviceXEROX CORP·Filed 2001·Granted Jun 24, 2003·6 cites·59 claims
- 3154US7723719B2Light emitting devices with inhomogeneous quantum well active regionsPALO ALTO RES CT INC·Filed 2007·Granted May 25, 2010·0 cites·19 claims
- 3251US2010006023A1Method For Preparing Films And Devices Under High Nitrogen Chemical PotentialPALO ALTO RES CT INC·Filed 2008·Application pending·0 cites
- 3350US10164146B2P-side layers for short wavelength light emittersPALO ALTO RES CT INC·Filed 2016·Granted Dec 25, 2018·0 cites·14 claims
- 3447US8059975B2Flexible diagnostic sensor sheetCHABINYC MICHAEL L·Filed 2008·Granted Nov 15, 2011·0 cites·23 claims
- 3547US2014154826A1Etch stop layers in nitride semiconductors created by polarity inversionCT INC PALO ALTO RES·Filed 2012·Application pending·0 cites
- 3646US5574745ASemiconductor devices incorporating P-type and N-type impurity induced layer disordered materialXEROX CORP·Filed 1995·Granted Nov 12, 1996·12 cites·21 claims
- 3745US8430705B1Self assembly of field emission tips by capillary bridge formationsSAMBANDAN SANJIV·Filed 2011·Granted Apr 30, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →