Inventor · disambiguated record
Su-Horng Lin
Also filed as: LIN SU-HORNG
24 granted patents·4 pending applications·104 citations·filing 2004–2023
93Inventor score
Top patents by PatentIndex Score
28 records- 0195US8623468B2Methods of fabricating metal hard masksLIN SU-HORNG·Filed 2012·Granted Jan 7, 2014·49 cites·18 claims
- 0289US10510566B2Cluster tool techniques with improved efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 17, 2019·8 cites·20 claims
- 0388US11652007B2Metrology methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 16, 2023·3 cites·20 claims
- 0486US11854851B2Interface toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·19 claims
- 0585US11414759B2Mechanisms for supplying process gas into wafer process apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2022·6 cites·20 claims
- 0681US12400915B2Metrology methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 0776US7193325B2Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 20, 2007·19 cites·13 claims
- 0874US8778754B2Method of forming a single metal that performs N and P work functions in high-K/metal gate devicesLIN SU-HORNG·Filed 2009·Granted Jul 15, 2014·5 cites·20 claims
- 0973US10867812B2Semiconductor manufacturing system and control methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·1 cites·20 claims
- 1072US2024087935A1Interface toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1170US9331168B2Semiconductor structure and manufacuturing method of the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 3, 2016·2 cites·20 claims
- 1268US12359318B2Mechanisms for supplying process gas into wafer process apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 1366US11443959B2Semiconductor manufacturing system and control methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 1464US9070681B2Method of forming a single metal that performs N and P work functions in high-K/metal gate devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 30, 2015·1 cites·20 claims
- 1563US11127629B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 21, 2021·1 cites·20 claims
- 1658US10460999B2Metrology device and metrology method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 29, 2019·0 cites·20 claims
- 1758US7138337B2Methods of forming tungsten contacts by chemical vapor depositionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 21, 2006·8 cites·20 claims
- 1855US10755953B2Cluster tool techniques with improved efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
- 1955US9435048B2Layer by layer electro chemical plating (ECP) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 6, 2016·0 cites·20 claims
- 2054US9633856B2Method of forming a singe metal that performs N and P work functions in high-K/metal gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·0 cites·20 claims
- 2151US9184045B2Bottom-up PEALD processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 10, 2015·0 cites·20 claims
- 2251US8932921B2N/P metal crystal orientation for high-k metal gate Vt modulationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 13, 2015·0 cites·19 claims
- 2349US10121653B2Bottom-up PEALD procesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 6, 2018·0 cites·20 claims
- 2444US2008194091A1Method for fabricating nitrided oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2543US10002780B2Method of manufacturing a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 19, 2018·0 cites·19 claims
- 2641US9543141B2Method for curing flowable layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·0 cites·18 claims
- 2734US2017025291A1Multi-chamber furnace for batch processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
- 2833US2014225232A1Reducing contamination during atomic layer depositionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →