Inventor · disambiguated record
Weonhong Kim
Also filed as: KIM WEONHONG
18 granted patents·2 pending applications·39 citations·filing 2010–2024
91Inventor score
Top patents by PatentIndex Score
20 records- 0196US11121080B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 14, 2021·4 cites·20 claims
- 0295US11177286B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·9 cites·20 claims
- 0394US11728347B2Method of manufacturing an integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·3 cites·8 claims
- 0489US11888063B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 30, 2024·1 cites·20 claims
- 0585US8652908B2Semiconductor devices employing high-K dielectric layers as a gate insulating layer and methods of fabricating the sameKIM WEONHONG·Filed 2011·Granted Feb 18, 2014·9 cites·11 claims
- 0682US11411106B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 9, 2022·1 cites·20 claims
- 0781US8673711B2Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated therebyKIM WEONHONG·Filed 2011·Granted Mar 18, 2014·7 cites·18 claims
- 0874US12167596B2Three-dimensional semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0974US10985275B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 20, 2021·1 cites·19 claims
- 1067US11610838B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
- 1167US8912611B2Semiconductor device having a high-K gate dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 16, 2014·2 cites·7 claims
- 1262US11552096B2Three-dimensional semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 10, 2023·0 cites·20 claims
- 1360US8778753B2Methods of fabricating semiconductor devicesDO JINHO·Filed 2012·Granted Jul 15, 2014·2 cites·14 claims
- 1457US2024274664A1Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1549US9142461B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 22, 2015·0 cites·6 claims
- 1648US2014124872A1Semiconductor devices employing high-k dielectric layers as a gate insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1746US11901356B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 13, 2024·0 cites·16 claims
- 1845US10950709B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·19 claims
- 1937US9755026B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 2033US8575705B2Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the sameLIM HAJIN·Filed 2010·Granted Nov 5, 2013·0 cites·20 claims
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