Assignee
LIM HAJIN
KR·2 granted patents·0 citations·filing 2010–2011
Top patents by PatentIndex Score
2 records- 0133US8575705B2Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the sameLIM HAJIN·Filed 2010·Granted Nov 5, 2013·0 cites·20 claims
- 0232US8735951B2Semiconductor device having diffusion barrier element injection regionLIM HAJIN·Filed 2011·Granted May 27, 2014·0 cites·19 claims
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