Inventor · disambiguated record
Khaled Ahmed
Also filed as: AHMED KHALED · AHMED KHALED Z
29 granted patents·22 pending applications·268 citations·filing 2000–2023
96Inventor score
Files withINTERMOLECULAR INC24APPLIED MATERIALS INC19INTEL CORP2ADVANCED MICRO DEVICES INC1AHMED KHALED1
Top patents by PatentIndex Score
51 records- 0196US9246013B2IGZO devices with composite channel layers and methods for forming the sameINTERMOLECULAR INC·Filed 2013·Granted Jan 26, 2016·26 cites·10 claims
- 0296US8043907B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2010·Granted Oct 25, 2011·42 cites·15 claims
- 0394US7910446B2Integrated scheme for forming inter-poly dielectrics for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 22, 2011·39 cites·16 claims
- 0493US9082793B1IGZO devices with reduced threshhold voltage shift and methods for forming the sameINTERMOLECULAR INC·Filed 2013·Granted Jul 14, 2015·15 cites·20 claims
- 0593US7659158B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Feb 9, 2010·25 cites·14 claims
- 0689US6472233B1MOSFET test structure for capacitance-voltage measurementsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 29, 2002·45 cites·12 claims
- 0785US7078302B2Gate electrode dopant activation method for semiconductor manufacturing including a laser annealAPPLIED MATERIALS INC·Filed 2004·Granted Jul 18, 2006·28 cites·33 claims
- 0882US9076651B1Gate stacks and ohmic contacts for SiC devicesINTERMOLECULAR INC·Filed 2013·Granted Jul 7, 2015·5 cites·20 claims
- 0982US7727828B2Method for fabricating a gate dielectric of a field effect transistorAPPLIED MATERIALS INC·Filed 2006·Granted Jun 1, 2010·8 cites·22 claims
- 1080US9076641B2Ultra-low resistivity contactsINTERMOLECULAR INC·Filed 2013·Granted Jul 7, 2015·2 cites·8 claims
- 1179US7902018B2Fluorine plasma treatment of high-k gate stack for defect passivationAPPLIED MATERIALS INC·Filed 2007·Granted Mar 8, 2011·8 cites·18 claims
- 1279US7871942B2Methods for manufacturing high dielectric constant filmAPPLIED MATERIALS INC·Filed 2008·Granted Jan 18, 2011·6 cites·18 claims
- 1377US9722049B2Methods for forming crystalline IGZO with a seed layerINTERMOLECULAR INC·Filed 2013·Granted Aug 1, 2017·3 cites·20 claims
- 1477US8993058B2Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devicesAPPLIED MATERIALS INC·Filed 2013·Granted Mar 31, 2015·3 cites·16 claims
- 1576US7888217B2Method for fabricating a gate dielectric of a field effect transistorAPPLIED MATERIALS INC·Filed 2005·Granted Feb 15, 2011·5 cites·36 claims
- 1673US7611976B2Gate electrode dopant activation method for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2006·Granted Nov 3, 2009·3 cites·43 claims
- 1766US9177791B2Systems and methods for forming semiconductor devicesINTERMOLECULAR INC·Filed 2013·Granted Nov 3, 2015·1 cites·15 claims
- 1865US9093264B2Methods and apparatus for forming silicon passivation layers on germanium or III-V semiconductor devicesAPPLIED MATERIALS INC·Filed 2013·Granted Jul 28, 2015·1 cites·9 claims
- 1965US9082729B2Combinatorial method for solid source doping process developmentINTERMOLECULAR INC·Filed 2013·Granted Jul 14, 2015·1 cites·20 claims
- 2064US8906709B1Combinatorially variable etching of stacks including two dissimilar materials for etch pit density inspectionINTERMOLECULAR INC·Filed 2013·Granted Dec 9, 2014·1 cites·19 claims
- 2163US2023178717A1Transition metal mechanical clamping layerINTEL CORP·Filed 2022·Application pending·0 cites
- 2262US7737036B2Integrated circuit fabrication process with minimal post-laser annealing dopant deactivationAPPLIED MATERIALS INC·Filed 2007·Granted Jun 15, 2010·1 cites·22 claims
- 2361US2015179839A1Contact layers for photovoltaic devicesINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 2457US12119367B2Composite substrate for fabricating III-V photodetector arraysUNIV SOUTHERN CALIFORNIA·Filed 2021·Granted Oct 15, 2024·0 cites·28 claims
- 2557US2015255332A1Ultra-Low Resistivity ContactsINTERMOLECULAR INC·Filed 2015·Application pending·0 cites
- 2656US2015176124A1Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALDINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 2755US2025105119A1Self-healing liner for through glass via reliabilityINTEL CORP·Filed 2023·Application pending·0 cites
- 2853US9190320B2Devices including metal-silicon contacts using indium arsenide films and apparatus and methodsAPPLIED MATERIALS INC·Filed 2013·Granted Nov 17, 2015·0 cites·6 claims
- 2952US2012202316A1Plasma treatment of tco layers for silicon thin film photovoltaic devicesAHMED KHALED·Filed 2012·Application pending·0 cites
- 3051US2016093772A1Methods for Reducing Interface Contact ResistivityINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 3150US9441298B2Devices including metal-silicon contacts using indium arsenide films and apparatus and methodsAPPLIED MATERIALS INC·Filed 2015·Granted Sep 13, 2016·0 cites·9 claims
- 3250US2006153995A1Method for fabricating a dielectric stackAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3349US9245743B2Methods for forming high-k dielectrics containing hafnium and zirconium using atomic layer depositionINTERMOLECULAR INC·Filed 2013·Granted Jan 26, 2016·0 cites·11 claims
- 3448US9136355B2Methods for forming amorphous silicon thin film transistorsINTERMOLECULAR INC·Filed 2013·Granted Sep 15, 2015·0 cites·13 claims
- 3548US2006062917A1Vapor deposition of hafnium silicate materials with tris(dimethylamino)silaneMUTHUKRISHNAN SHANKAR·Filed 2005·Application pending·0 cites
- 3647US7863193B2Integrated circuit fabrication process using a compression cap layer in forming a silicide with minimal post-laser annealing dopant deactivationAPPLIED MATERIALS INC·Filed 2007·Granted Jan 4, 2011·0 cites·24 claims
- 3746US2016181430A1IGZO Devices with Metallic Contacts and Methods for Forming the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 3845US9373516B2Method and apparatus for forming gate stack on Si, SiGe or Ge channelsAHMED KHALED Z·Filed 2013·Granted Jun 21, 2016·0 cites·18 claims
- 3945US8975706B2Gate stacks including TaXSiYO for MOSFETSINTERMOLECULAR INC·Filed 2013·Granted Mar 10, 2015·0 cites·12 claims
- 4045US2009042353A1Integrated circuit fabrication process for a high melting temperature silicide with minimal post-laser annealing dopant deactivationMA YI·Filed 2007·Application pending·0 cites
- 4144US2014065799A1Methods and Systems for Low Resistance Contact FormationINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4242US2014159120A1Conformal DopingINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4342US2015179815A1Quantum Well IGZO Devices and Methods for Forming the SameINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4442US2015187958A1IGZO Devices with Reduced Electrode Contact Resistivity and Methods for Forming the SameINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4542US2015132938A1Methods and Systems for Forming Reliable Gate Stack on SemiconductorsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4642US2015187956A1IGZO Devices with Increased Drive Current and Methods for Forming the SameINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4742US2015177311A1Methods and Systems for Evaluating IGZO with Respect to NBISINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4842US2014065819A1Methods and Systems for Low Resistance Contact FormationINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4941US2013299937A1Method and apparatus for ultra-low contact resistance for semiconductor channel n-fetAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 5040US2006019033A1Plasma treatment of hafnium-containing materialsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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