Inventor · disambiguated record
Virginia Robbins
Also filed as: ROBBINS VIRGINIA · ROBBINS VIRGINIA M
21 granted patents·4 pending applications·1,186 citations·filing 1989–2024
96Inventor score
Files withAVAGO TECH ECBU IP SG PTE LTD6AGILENT TECHNOLOGIES INC4HEWLETT PACKARD CO3ONED MAT INC3NANOSYS INC2
Top patents by PatentIndex Score
25 records- 0198US5376580AWafer bonding of light emitting diode layersHEWLETT PACKARD CO·Filed 1993·Granted Dec 27, 1994·537 cites·29 claims
- 0297US5502316AWafer bonding of light emitting diode layersHEWLETT PACKARD CO·Filed 1995·Granted Mar 26, 1996·262 cites·16 claims
- 0396US11967707B2Nanostructured battery active materials and methods of producing sameONED MAT INC·Filed 2023·Granted Apr 23, 2024·2 cites·18 claims
- 0495US7273798B2Gallium nitride device substrate containing a lattice parameter altering elementAVAGO TECH ECBU IP SG PTE LTD·Filed 2005·Granted Sep 25, 2007·31 cites·10 claims
- 0593US10243207B2Nanostructured battery active materials and methods of producing sameCAO WANQING·Filed 2012·Granted Mar 26, 2019·12 cites·21 claims
- 0693US5008718ALight-emitting diode with an electrically conductive windowFLETCHER ROBERT M·Filed 1989·Granted Apr 16, 1991·155 cites·14 claims
- 0792US11616225B2Nanostructured battery active materials and methods of producing sameONED MAT LLC·Filed 2019·Granted Mar 28, 2023·3 cites·8 claims
- 0892US7951422B2Methods for oriented growth of nanowires on patterned substratesNANOSYS INC·Filed 2006·Granted May 31, 2011·23 cites·37 claims
- 0991US12438148B2Nanostructured battery active materials and methods of producing sameONED MAT INC·Filed 2024·Granted Oct 7, 2025·0 cites·38 claims
- 1091US12368162B2Nanostructured battery active materials and methods of producing sameONED MAT INC·Filed 2024·Granted Jul 22, 2025·0 cites·21 claims
- 1191US6953702B2Fixed wavelength vertical cavity optical devices and method of manufacture thereforAGILENT TECHNOLOGIES INC·Filed 2002·Granted Oct 11, 2005·36 cites·8 claims
- 1290US6806110B2Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture thereforAGILENT TECHNOLOGIES INC·Filed 2002·Granted Oct 19, 2004·34 cites·10 claims
- 1389US7785922B2Methods for oriented growth of nanowires on patterned substratesNANOSYS INC·Filed 2006·Granted Aug 31, 2010·17 cites·37 claims
- 1487US8039869B2Gallium nitride device substrate containing a lattice parameter altering elementTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 18, 2011·10 cites·7 claims
- 1587US6771680B2Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)AGILENT TECHNOLOGIES INC·Filed 2002·Granted Aug 3, 2004·25 cites·13 claims
- 1680US7635874B2Edge-emitting LED assemblyAVAGO TECH ECBU IP SG PTE LTD·Filed 2005·Granted Dec 22, 2009·7 cites·15 claims
- 1778US7473941B2Structures for reducing operating voltage in a semiconductor deviceAVAGO TECH ECBU IP SG PTE LTD·Filed 2005·Granted Jan 6, 2009·5 cites·15 claims
- 1861US5115286AElectro-optical device with inverted transparent substrate and method for making sameHEWLETT PACKARD CO·Filed 1991·Granted May 19, 1992·22 cites·13 claims
- 1955US2010032703A1Edge-emitting led assemblyAVAGO TECH ECBU IP SG PTE LTD·Filed 2009·Application pending·0 cites
- 2053US7847297B2Ohmic contact on p-type GaNAVAGO TECH ECBU IP SG PTE LTD·Filed 2009·Granted Dec 7, 2010·0 cites·6 claims
- 2153US6586113B1Etching heterojunction interfacesAGILENT TECHNOLOGIES INC·Filed 2000·Granted Jul 1, 2003·5 cites·22 claims
- 2247US7495314B2Ohmic contact on p-type GaNAVAGO TECH ECBU IP SG PTE LTD·Filed 2005·Granted Feb 24, 2009·0 cites·8 claims
- 2341US2007019699A1Light emitting device and method of manufactureROBBINS VIRGINIA M·Filed 2005·Application pending·0 cites
- 2441US2007029555A1Edge-emitting LED light sourceLESTER STEVEN D·Filed 2005·Application pending·0 cites
- 2541US2007023761A1Silicon carbon germanium (SiCGe) substrate for a group III nitride-based deviceROBBINS VIRGINIA M·Filed 2005·Application pending·0 cites
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