Inventor · disambiguated record
Jeong-Do Ryu
Also filed as: RYU JEONG-DO
13 granted patents·4 pending applications·38 citations·filing 2004–2025
87Inventor score
Top patents by PatentIndex Score
17 records- 0184US7968442B2Fin field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 28, 2011·11 cites·7 claims
- 0272US8691649B2Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devicesPARK TAI-SU·Filed 2011·Granted Apr 8, 2014·4 cites·20 claims
- 0369US6930062B2Methods of forming an oxide layer in a transistor having a recessed gateSAMSUNG ELECTRONICS CO INC·Filed 2004·Granted Aug 16, 2005·12 cites·9 claims
- 0468US7498213B2Methods of fabricating a semiconductor substrate for reducing wafer warpageSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 3, 2009·2 cites·18 claims
- 0566US11798824B2Heating device for heating object material using laser beam and indirect heating method using laser beamRNR LAB INC·Filed 2022·Granted Oct 24, 2023·0 cites·6 claims
- 0664US7129174B2Methods of fabricating a semiconductor substrate for reducing wafer warpageSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 31, 2006·8 cites·14 claims
- 0761US11488828B2Method of indirect heating using laserRNR LAB INC·Filed 2021·Granted Nov 1, 2022·0 cites·10 claims
- 0855US8252681B2Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewallsRYU JEONG-DO·Filed 2009·Granted Aug 28, 2012·0 cites·10 claims
- 0954US9190495B2Recessed channel array transistors, and semiconductor devices including a recessed channel array transistorRYU JEONG-DO·Filed 2009·Granted Nov 17, 2015·1 cites·11 claims
- 1052US11462424B2Heating device for heating object material using laser beam and indirect heating method using laser beamRNR LAB INC·Filed 2018·Granted Oct 4, 2022·0 cites·10 claims
- 1151US10978304B2Method of indirect heating using laserRNR LAB INC·Filed 2018·Granted Apr 13, 2021·0 cites·10 claims
- 1251US2024412974A1Method of forming epitaxial semiconductor layer and method of manufacturing semiconductor device using the sameRNR LAB INC·Filed 2022·Application pending·0 cites
- 1350US8501611B2Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewallsRYU JEONG-DO·Filed 2012·Granted Aug 6, 2013·0 cites·12 claims
- 1449US2010025749A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1548US2025273467A1Laser heat treatment method and manufacturing method of electronic device using the sameRNR LAB INC·Filed 2025·Application pending·0 cites
- 1646US12009255B2Method of manufacturing semiconductor device including laser treatment for contact plugRNR LAB INC·Filed 2019·Granted Jun 11, 2024·0 cites·8 claims
- 1739US2005285162A1Semiconductor devices having a stacked structure and methods of forming the sameKIM CHUL-SUNG·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →