Inventor · disambiguated record
Thierry Coffi Herve Yao
Also filed as: YAO THIERRY · YAO THIERRY COFFI HERVE
33 granted patents·2 pending applications·88 citations·filing 2005–2020
96Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC13YAO THIERRY COFFI HERVE7NANTERO INC5AGAM MOSHE4SEMICONDUCTOR COMPONENTS IND3
Top patents by PatentIndex Score
35 records- 0192US9245952B2Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jan 26, 2016·13 cites·14 claims
- 0289US7915637B2Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the sameNANTERO INC·Filed 2008·Granted Mar 29, 2011·10 cites·12 claims
- 0385US9337423B2Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubesNANTERO INC·Filed 2015·Granted May 10, 2016·2 cites·15 claims
- 0485US8394700B2Device including memory array and method thereofSCOTT GREGORY JAMES·Filed 2010·Granted Mar 12, 2013·12 cites·20 claims
- 0582US8530283B2Process for forming an electronic device including a nonvolatile memory structure having an antifuse componentAGAM MOSHE·Filed 2011·Granted Sep 10, 2013·6 cites·20 claims
- 0681US10043899B1Laterally diffused MOSFET for embedded memory applicationsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Aug 7, 2018·3 cites·16 claims
- 0780US8409944B2Process of forming an electronic device including a nonvolatile memory cell having a floating gate electrode or a conductive member with different portionsYAO THIERRY COFFI HERVE·Filed 2010·Granted Apr 2, 2013·5 cites·20 claims
- 0879US8279681B2Method of using a nonvolatile memory cellYAO THIERRY COFFI HERVE·Filed 2010·Granted Oct 2, 2012·7 cites·20 claims
- 0978US8669604B2Electronic device including a nonvolatile memory cellYAO THIERRY COFFI HERVE·Filed 2013·Granted Mar 11, 2014·4 cites·19 claims
- 1076US10224323B2Isolation structure for semiconductor device having self-biasing buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Mar 5, 2019·2 cites·20 claims
- 1175US10153213B2Process of forming an electronic device including a drift region, a sinker region and a resurf regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Dec 11, 2018·3 cites·17 claims
- 1273US8921175B2Process of forming an electronic device including a nonvolatile memory cellYAO THIERRY COFFI HERVE·Filed 2012·Granted Dec 30, 2014·3 cites·20 claims
- 1372US7102188B1High reliability electrically erasable and programmable read-only memory (EEPROM)AMI SEMICONDUCTOR INC·Filed 2005·Granted Sep 5, 2006·6 cites·41 claims
- 1470US9236125B2Process of forming an electronic device including a nonvolatile memory cellSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jan 12, 2016·2 cites·20 claims
- 1567US9923092B2Method of forming a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Mar 20, 2018·1 cites·13 claims
- 1667US9478607B2Electronic device including an isolation structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Oct 25, 2016·2 cites·20 claims
- 1761US10181569B2Two-terminal switching devices comprising coated nanotube elementsNANTERO INC·Filed 2017·Granted Jan 15, 2019·0 cites·8 claims
- 1861US9356158B2Electronic device including a tunnel structureYAO THIERRY COFFI HERVE·Filed 2012·Granted May 31, 2016·2 cites·20 claims
- 1961US8969142B2Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the sameNANTERO INC·Filed 2013·Granted Mar 3, 2015·0 cites·10 claims
- 2061US8803282B2Electronic device including a nonvolatile memory structure having an antifuse componentAGAM MOSHE·Filed 2013·Granted Aug 12, 2014·1 cites·20 claims
- 2161US8399918B2Electronic device including a tunnel structureYAO THIERRY COFFI HERVE·Filed 2010·Granted Mar 19, 2013·2 cites·17 claims
- 2260US9755170B2Resistive materials comprising mixed nanoscopic particles and carbon nanotubesNANTERO INC·Filed 2016·Granted Sep 5, 2017·0 cites·15 claims
- 2358US2021125879A1Split well implantation processes for cmos and peripheral devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 2458US2021125878A1Split well implantation for cmos and peripheral devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 2557US11355580B2Lateral DMOS device with step-profiled RESURF and drift structuresSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 2657US9741726B2Non-volatile memory cell and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Aug 22, 2017·0 cites·11 claims
- 2755US10490549B2Isolation structure for semiconductor device having self-biasing buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Nov 26, 2019·0 cites·20 claims
- 2855US8896050B2Electronic device including a tunnel structureYAO THIERRY COFFI HERVE·Filed 2013·Granted Nov 25, 2014·1 cites·20 claims
- 2955US8724364B2Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the sameAGAM MOSHE·Filed 2011·Granted May 13, 2014·1 cites·18 claims
- 3052US10304843B2Method of manufacturing and operating a non-volatile memory cellSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted May 28, 2019·0 cites·20 claims
- 3150US10896954B2Electronic device including a drift regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jan 19, 2021·0 cites·18 claims
- 3250US9048237B2Electronic device including a nonvolatile memory structure having an antifuse componentSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jun 2, 2015·0 cites·20 claims
- 3346US8586424B2Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the sameGHENCIU ELIODOR G·Filed 2011·Granted Nov 19, 2013·0 cites·20 claims
- 3443US8741697B2Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the sameAGAM MOSHE·Filed 2011·Granted Jun 3, 2014·0 cites·10 claims
- 3542US10505053B2Electronic device including a tunnel structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Dec 10, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →