Inventor · disambiguated record
Minghwei Hong
Also filed as: HONG MINGHWEI
25 granted patents·1 pending application·501 citations·filing 1990–2024
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11AT & T BELL LAB6LUCENT TECHNOLOGIES INC5AGERE SYST GUARDIAN CORP3AGERE SYSTEMS INC1
Top patents by PatentIndex Score
26 records- 0193US6404027B1High dielectric constant gate oxides for silicon-based devicesAGERE SYST GUARDIAN CORP·Filed 2000·Granted Jun 11, 2002·87 cites·15 claims
- 0292US9620605B2Semiconductor device structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·41 cites·20 claims
- 0384US5208183AMethod of making a semiconductor laserAT & T BELL LAB·Filed 1991·Granted May 4, 1993·48 cites·6 claims
- 0482US5212701ASemiconductor surface emitting laser having enhanced optical confinementAT & T BELL LAB·Filed 1992·Granted May 18, 1993·38 cites·6 claims
- 0576US11201055B2Semiconductor device having high-κ dielectric layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 14, 2021·3 cites·20 claims
- 0676US5962883AArticle comprising an oxide layer on a GaAs-based semiconductor bodyLUCENT TECHNOLOGIES INC·Filed 1998·Granted Oct 5, 1999·38 cites·9 claims
- 0775US5821171AArticle comprising a gallium layer on a GaAs-based semiconductor, and method of making the articleLUCENT TECHNOLOGIES INC·Filed 1995·Granted Oct 13, 1998·56 cites·8 claims
- 0874US5088099AApparatus comprising a laser adapted for emission of single mode radiation having low transverse divergenceAT & T BELL LAB·Filed 1990·Granted Feb 11, 1992·32 cites·9 claims
- 0973US2025098279A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1070US5348912ASemiconductor surface emitting laser having enhanced optical confinementAT & T BELL LAB·Filed 1993·Granted Sep 20, 1994·23 cites·4 claims
- 1168US12191205B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1265US5559053AVertical cavity semiconductor laserLUCENT TECHNOLOGIES INC·Filed 1995·Granted Sep 24, 1996·30 cites·8 claims
- 1361US11615955B2Material having single crystal perovskite, device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 1458US6469357B1Article comprising an oxide layer on a GaAs or GaN-based semiconductor bodyAGERE SYST GUARDIAN CORP·Filed 1998·Granted Oct 22, 2002·23 cites·5 claims
- 1557US11081339B2Single-crystal rare earth oxide grown on III-V compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 1657US6271069B1Method of making an article comprising an oxide layer on a GaAs-based semiconductor bodyAGERE SYST GUARDIAN CORP·Filed 1998·Granted Aug 7, 2001·18 cites·17 claims
- 1756US5275687AProcess for removing surface contaminants from III-V semiconductorsAT & T BELL LAB·Filed 1992·Granted Jan 4, 1994·27 cites·6 claims
- 1853US10158014B2MOS devices with ultra-high dielectric constants and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 1953US9614079B2MOS devices with ultra-high dielectric constants and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·0 cites·15 claims
- 2050US5903037AGaAs-based MOSFET, and method of making sameLUCENT TECHNOLOGIES INC·Filed 1997·Granted May 11, 1999·13 cites·2 claims
- 2149US10755924B2Material having single crystal perovskite, device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 25, 2020·0 cites·18 claims
- 2249US10283349B2Single-crystal rare earth oxide grown on III-V compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 7, 2019·0 cites·20 claims
- 2349US10032770B2Semiconductor device structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 24, 2018·0 cites·20 claims
- 2449US5912498AArticle comprising an oxide layer on GANLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jun 15, 1999·15 cites·5 claims
- 2536US5213995AMethod of making an article comprising a periodic heteroepitaxial semiconductor structureAT & T BELL LAB·Filed 1992·Granted May 25, 1993·8 cites·7 claims
- 2630US6495407B1Method of making an article comprising an oxide layer on a GaAs-based semiconductor bodyAGERE SYSTEMS INC·Filed 1998·Granted Dec 17, 2002·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →