Inventor · disambiguated record
Ming-Ren Lin
Also filed as: LIN MING-REN
105 granted patents·5,370 citations·filing 1994–2012
99Inventor score
Files withADVANCED MICRO DEVICES INC96LIN MING-REN3GLOBALFOUNDRIES INC2GLOBAL FOUNDRIES INC1SPANSION LLC1
Top patents by PatentIndex Score
105 records- 0199US6800910B2FinFET device incorporating strained silicon in the channel regionADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 5, 2004·295 cites·30 claims
- 0298US6762448B1FinFET device with multiple fin structuresADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 13, 2004·168 cites·9 claims
- 0398US5635423ASimplified dual damascene process for multi-level metallization and interconnection structureADVANCED MICRO DEVICES INC·Filed 1994·Granted Jun 3, 1997·374 cites·13 claims
- 0497US6670260B1Transistor with local insulator structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 30, 2003·124 cites·20 claims
- 0597US6093594ACMOS optimization method utilizing sacrificial sidewall spacerADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 25, 2000·264 cites·20 claims
- 0696US6787864B2Mosfets incorporating nickel germanosilicided gate and methods for their formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·126 cites·21 claims
- 0796US6060364AFast Mosfet with low-doped source/drainADVANCED MICRO DEVICES INC·Filed 1999·Granted May 9, 2000·143 cites·17 claims
- 0895US7994020B2Method of forming finned semiconductor devices with trench isolationADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 9, 2011·55 cites·13 claims
- 0995US6855982B1Self aligned double gate transistor having a strained channel region and process thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 15, 2005·103 cites·20 claims
- 1095US5614765ASelf aligned via dual damasceneADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 25, 1997·172 cites·10 claims
- 1194US7250645B1Reversed T-shaped FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 31, 2007·74 cites·13 claims
- 1294US6380019B1Method of manufacturing a transistor with local insulator structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 30, 2002·150 cites·19 claims
- 1394US6159782AFabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constantADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 12, 2000·126 cites·14 claims
- 1494US5705430ADual damascene with a sacrificial via fillADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 6, 1998·173 cites·16 claims
- 1593US6764898B1Implantation into high-K dielectric material after gate etch to facilitate removalADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·76 cites·23 claims
- 1692US8431466B2Method of forming finned semiconductor devices with trench isolationLIN MING-REN·Filed 2011·Granted Apr 30, 2013·20 cites·11 claims
- 1791US7871873B2Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor materialGLOBAL FOUNDRIES INC·Filed 2009·Granted Jan 18, 2011·23 cites·19 claims
- 1891US6943087B1Semiconductor on insulator MOSFET having strained silicon channelADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·59 cites·15 claims
- 1991US6855989B1Damascene finfet gate with selective metal interdiffusionADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·54 cites·19 claims
- 2091US6812119B1Narrow fins by oxidation in double-gate finfetADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·57 cites·14 claims
- 2191US6437404B1Semiconductor-on-insulator transistor with recessed source and drainADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 20, 2002·64 cites·28 claims
- 2291US6262456B1Integrated circuit having transistors with different threshold voltagesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 17, 2001·92 cites·25 claims
- 2391US6207553B1Method of forming multiple levels of patterned metallizationADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 27, 2001·126 cites·19 claims
- 2491US6087231AFabrication of dual gates of field transistors with prevention of reaction between the gate electrode and the gate dielectric with a high dielectric constantADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 11, 2000·102 cites·15 claims
- 2591US5795823ASelf aligned via dual damasceneADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 18, 1998·114 cites·20 claims
- 2689US5753967ADamascene process for reduced feature sizeADVANCED MICRO DEVICES INC·Filed 1997·Granted May 19, 1998·81 cites·20 claims
- 2788US7541267B1Reversed T-shaped finfetADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 2, 2009·13 cites·8 claims
- 2888US6790782B1Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removalADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 14, 2004·42 cites·20 claims
- 2988US6204138B1Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effectsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 20, 2001·71 cites·19 claims
- 3087US7235436B1Method for doping structures in FinFET devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 26, 2007·38 cites·14 claims
- 3187US7196372B1Flash memory deviceSPANSION LLC·Filed 2003·Granted Mar 27, 2007·42 cites·16 claims
- 3287US6483147B1Through wafer backside contact to improve SOI heat dissipationADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 19, 2002·83 cites·1 claims
- 3387US6369429B1Low resistance composite contact structure utilizing a reaction barrier layer under a metal layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·31 cites·18 claims
- 3487US6180487B1Selective thinning of barrier oxide through masked SIMOX implantADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 30, 2001·88 cites·17 claims
- 3587US5785236AAdvanced copper interconnect system that is compatible with existing IC wire bonding technologyADVANCED MICRO DEVICES INC·Filed 1995·Granted Jul 28, 1998·89 cites·22 claims
- 3685US6852576B2Method for forming structures in finfet devicesADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 8, 2005·28 cites·20 claims
- 3784US6238960B1Fast MOSFET with low-doped source/drainADVANCED MICRO DEVICES INC·Filed 2000·Granted May 29, 2001·29 cites·8 claims
- 3884US5937315ASelf-aligned silicide gate technology for advanced submicron MOS devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·51 cites·8 claims
- 3984US5691238ASubtractive dual damasceneADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 25, 1997·68 cites·19 claims
- 4084US5686354ADual damascene with a protective mask for via etchingADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 11, 1997·80 cites·11 claims
- 4183US7498225B1Systems and methods for forming multiple fin structures using metal-induced-crystallizationADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 3, 2009·8 cites·20 claims
- 4283US7329582B1Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive materialADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 12, 2008·9 cites·15 claims
- 4383US6180469B1Low resistance salicide technology with reduced silicon consumptionADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 30, 2001·69 cites·12 claims
- 4482US5960322ASuppression of boron segregation for shallow source and drain junctions in semiconductorsADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 28, 1999·64 cites·11 claims
- 4581US8580660B2Double and triple gate MOSFET devices and methods for making sameLIN MING-REN·Filed 2012·Granted Nov 12, 2013·5 cites·20 claims
- 4681US7064022B1Method of forming merged FET inverter/logic gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 20, 2006·26 cites·20 claims
- 4781US6764966B1Spacers with a graded dielectric constant for semiconductor devices having a high-K dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·28 cites·5 claims
- 4881US6531753B1Embedded conductor for SOI devices using a buried conductive layer/conductive plug combinationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 11, 2003·29 cites·9 claims
- 4981US5904528AMethod of forming asymmetrically doped source/drain regionsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 18, 1999·54 cites·2 claims
- 5081US5863707AMethod for producing ultra-fine interconnection featuresADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 26, 1999·60 cites·30 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →