Inventor · disambiguated record
Robert M. Rassel
Also filed as: RASSEL ROBERT M · RASSEL ROBERT MARK
112 granted patents·11 pending applications·671 citations·filing 2003–2014
99Inventor score
Top patents by PatentIndex Score
123 records- 0196US8110862B2Semiconductor structure including trench capacitor and trench resistorCHENG KANGGUO·Filed 2009·Granted Feb 7, 2012·39 cites·14 claims
- 0295US8674423B2Semiconductor structure having vias and high density capacitorsCOLLINS DAVID S·Filed 2011·Granted Mar 18, 2014·26 cites·18 claims
- 0395US7217981B2Tunable temperature coefficient of resistance resistors and method of fabricating sameIBM·Filed 2005·Granted May 15, 2007·36 cites·28 claims
- 0494US8035190B2Semiconductor devicesIBM·Filed 2010·Granted Oct 11, 2011·15 cites·10 claims
- 0594US7242071B1Semiconductor structureIBM·Filed 2006·Granted Jul 10, 2007·30 cites·24 claims
- 0692US7361993B2Terminal pad structures and methods of fabricating sameIBM·Filed 2005·Granted Apr 22, 2008·21 cites·14 claims
- 0791US7750408B2Integrated circuit structure incorporating an inductor, a conductive sheet and a protection circuitIBM·Filed 2007·Granted Jul 6, 2010·19 cites·21 claims
- 0890US8299475B2Interlevel conductive light shieldGAMBINO JEFFREY P·Filed 2012·Granted Oct 30, 2012·5 cites·13 claims
- 0990US7989306B2Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrateIBM·Filed 2007·Granted Aug 2, 2011·13 cites·5 claims
- 1090US7943445B2Asymmetric junction field effect transistorIBM·Filed 2009·Granted May 17, 2011·16 cites·10 claims
- 1190US7361950B2Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectricIBM·Filed 2005·Granted Apr 22, 2008·17 cites·17 claims
- 1289US9412736B2Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon viasGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 9, 2016·11 cites·19 claims
- 1389US7825441B2Junction field effect transistor with a hyperabrupt junctionIBM·Filed 2007·Granted Nov 2, 2010·16 cites·35 claims
- 1488US7545007B2MOS varactor with segmented gate dopingIBM·Filed 2005·Granted Jun 9, 2009·18 cites·9 claims
- 1587US8158988B2Interlevel conductive light shieldGAMBINO JEFFREY P·Filed 2008·Granted Apr 17, 2012·8 cites·13 claims
- 1687US8159040B2Metal gate integration structure and method including metal fuse, anti-fuse and/or resistorCOOLBAUGH DOUGLAS D·Filed 2008·Granted Apr 17, 2012·15 cites·21 claims
- 1786US8168500B2Double gate depletion mode MOSFETCAMPI JOHN B·Filed 2011·Granted May 1, 2012·8 cites·20 claims
- 1886US7670889B2Structure and method for fabrication JFET in CMOSIBM·Filed 2008·Granted Mar 2, 2010·12 cites·19 claims
- 1986US7329940B2Semiconductor structure and method of manufactureIBM·Filed 2005·Granted Feb 12, 2008·10 cites·24 claims
- 2085US8881379B2Method of making heat sink for integrated circuit devicesCOOLBAUGH DOUGLAS D·Filed 2012·Granted Nov 11, 2014·4 cites·17 claims
- 2184US8105924B2Deep trench based far subcollector reachthroughORNER BRADLEY A·Filed 2010·Granted Jan 31, 2012·8 cites·11 claims
- 2284US7494912B2Terminal pad structures and methods of fabricating sameIBM·Filed 2007·Granted Feb 24, 2009·9 cites·8 claims
- 2383US8288244B2Lateral passive device having dual annular electrodesCOLLINS DAVID S·Filed 2010·Granted Oct 16, 2012·6 cites·4 claims
- 2483US7994895B2Heat sink for integrated circuit devicesIBM·Filed 2007·Granted Aug 9, 2011·8 cites·30 claims
- 2583US7659176B2Tunable temperature coefficient of resistance resistors and method of fabricating sameIBM·Filed 2007·Granted Feb 9, 2010·9 cites·29 claims
- 2682US8421181B2Schottky barrier diode with perimeter capacitance well junctionANDERSON FREDERICK G·Filed 2010·Granted Apr 16, 2013·8 cites·24 claims
- 2782US8169007B2Asymmetric junction field effect transistorANDERSON FREDERICK G·Filed 2011·Granted May 1, 2012·6 cites·15 claims
- 2882US7560761B2Semiconductor structure including trench capacitor and trench resistorIBM·Filed 2006·Granted Jul 14, 2009·8 cites·5 claims
- 2981US8171435B2Integrated circuit structure incorporating an inductor, an associated design method and an associated design systemHE ZHONG-XIANG·Filed 2010·Granted May 1, 2012·5 cites·20 claims
- 3081US8125049B2MIM capacitor structure in FEOL and related methodCOOLBAUGH DOUGLAS D·Filed 2009·Granted Feb 28, 2012·7 cites·16 claims
- 3180US8735986B2Forming structures on resistive substratesBOTULA ALAN B·Filed 2011·Granted May 27, 2014·4 cites·18 claims
- 3280US8518782B2Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structureBOTULA ALAN B·Filed 2010·Granted Aug 27, 2013·4 cites·9 claims
- 3380US8338265B2Silicided trench contact to buried conductive layerCOOLBAUGH DOUGLAS D·Filed 2008·Granted Dec 25, 2012·7 cites·16 claims
- 3480US7691734B2Deep trench based far subcollector reachthroughIBM·Filed 2007·Granted Apr 6, 2010·8 cites·9 claims
- 3580US7397087B2FEOL/MEOL metal resistor for high end CMOSIBM·Filed 2004·Granted Jul 8, 2008·26 cites·8 claims
- 3679US8618588B2Anti-blooming pixel sensor cell with active neutral density filter, methods of manufacture, and design structureACKERSON KRISTIN M·Filed 2010·Granted Dec 31, 2013·4 cites·20 claims
- 3779US8101494B2Structure, design structure and method of manufacturing a structure having VIAS and high density capacitorsCOLLINS DAVID S·Filed 2008·Granted Jan 24, 2012·7 cites·24 claims
- 3879US7910450B2Method of fabricating a precision buried resistorIBM·Filed 2006·Granted Mar 22, 2011·7 cites·10 claims
- 3978US8466501B2Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFETHERSHBERGER DOUGLAS B·Filed 2010·Granted Jun 18, 2013·8 cites·19 claims
- 4078US8230586B2Method of cooling a resistorCOOLBAUGH DOUGLAS D·Filed 2007·Granted Jul 31, 2012·4 cites·14 claims
- 4178US7977714B2Wrapped gate junction field effect transistorIBM·Filed 2007·Granted Jul 12, 2011·7 cites·14 claims
- 4278US7915134B2Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric materialIBM·Filed 2008·Granted Mar 29, 2011·6 cites·19 claims
- 4378US7335927B2Lateral silicided diodesIBM·Filed 2006·Granted Feb 26, 2008·6 cites·18 claims
- 4478US7183628B2Structure and method of hyper-abrupt junction varactorsIBM·Filed 2004·Granted Feb 27, 2007·17 cites·13 claims
- 4577US7691717B2Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereofIBM·Filed 2006·Granted Apr 6, 2010·5 cites·9 claims
- 4675US8519478B2Schottky barrier diode, a method of forming the diode and a design structure for the diodeRASSEL ROBERT M·Filed 2011·Granted Aug 27, 2013·5 cites·20 claims
- 4775US8138579B2Structures and methods of forming SiGe and SiGeC buried layer for SOI/SiGe technologyLIU XUEFENG·Filed 2007·Granted Mar 20, 2012·6 cites·23 claims
- 4875US8008748B2Deep trench varactorsIBM·Filed 2008·Granted Aug 30, 2011·6 cites·29 claims
- 4975US7518215B2One mask hyperabrupt junction varactor using a compensated cathode contactIBM·Filed 2005·Granted Apr 14, 2009·6 cites·9 claims
- 5074US7285472B2Low tolerance polysilicon resistor for low temperature silicide processingIBM·Filed 2005·Granted Oct 23, 2007·4 cites·19 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →